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Ab Initio Calculations of Electronic Properties of Vanadium Oxides

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Abstract

In this comprehensive study, we have performed one-electron Kohn–Sham electronic band-structure calculations of VO2, V2O3 and V2O5 in both metallic and insulating phases, implementing a full ab initio simulation package based on Density Functional Theory, Plane Waves and Pseudopotentials (PPs). Electronic band structures are found to be influenced by crystal structure, crystal field splitting and strong hybridization between O2 p and V3 d bands. “Intermediate bands”, with narrow band widths, lying just below the higher conduction bands, are observed in V2O5. Similar calculations are performed for both metallic and insulating phases of bulk VO2 and V2O3. Unlike in the metallic phase, bands corresponding to “valence electrons” considered in the PPs are found to be fully occupied in the insulating phases.

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  1. Department of Physics, New Jersey Institute of Technology, Newark, NJ, 07102, USA

    Chiranjivi Lamsal & N. M. Ravindra

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  1. Chiranjivi Lamsal
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  2. N. M. Ravindra
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Correspondence to N. M. Ravindra.

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Lamsal, C., Ravindra, N.M. Ab Initio Calculations of Electronic Properties of Vanadium Oxides. JOM 67, 3022–3029 (2015). https://doi.org/10.1007/s11837-015-1625-z

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