Abstract
A series of amorphous electron beam evaporated Ta and TaN films with N/Ta ratio from 0 to 1.15 were deposited on Si/SiO2 substrates at 200°C. As N/Ta ratio increases, the TaN films undergo phase changes from pure metallic Ta to a mixture of Ta, Ta2N, and nitrogen-rich TaN films. The electrical resistivity of the Ta and TaN films increased from 242 µΩ-cm to 1126 µΩ-cm with increasing N/Ta ratio. X-ray diffraction patterns revealed the development of different phases of TaN that are in agreement with the TaN phase diagram. The presence of different phases on the film surface was also confirmed by x-ray photo-emission spectroscopy (XPS) analysis. Groups of Ta4f doublet related to different TaN phases were observed in the core-level spectra of TaN films. Field-emission scanning electron microscopy images revealed that surface morphology also varied with the phase change in TaN films. The N/Ta ratios from energy-dispersive x-ray generally agreed with those from the XPS analysis.
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References
S. Kanamori, Thin Solid Films 136, 195 (1986).
M. Wittmer, Appl. Phys. Lett. 37, 540 (1980).
M.A. Farooq, S.P. Murarka, C.C. Chang, and F.A. Baiocchi, J. Appl. Phys. 65, 3017 (1989).
A. Noya, K. Sasaki, and M. Takeyama, Jpn. J. Appl. Phys. 32, 911 (1993).
C.Y. Chen, E.Y. Chang, L. Chang, and S.H. Chen, Electron. Lett. 36, 1317 (2000).
C.Y. Chen, E.Y. Chang, L. Chang, and S.H. Chen, IEEE Trans. Electron Device 48, 1033 (2001).
C.C. Chang, J.S. Jeng, and J.S. Chen, Thin Solid Films 413, 46 (2002).
S.M. Aouadi and M. Debessai, J. Vac. Sci. Technol. A 22, 1975 (2004).
K. Stella, D. Burstel, S. Franzka, O. Posth, and D. Diesing, J. Phys. D 42, 135417 (2009).
N. Arshi, J. Lu, C.G. Lee, B.H. Koo, and F. Ahmed, Electron. Mater. Lett. 9, 841 (2013).
A. Powell, U. Pal, J. van den Avyle, B. Damkroger, and J. Szekely, Metall. Mater. Trans. B 6, 1227 (1997).
W. Ensinger, M. Kiuchi, and M. Satou, J. Appl. Phys. 77, 6630 (1995).
V. Mikhelashvili and E. Eisenstein, Microelectron. Reliab. 41, 1057 (2001).
D.J. Willmott, J. Appl. Phys. 43, 4865 (1972).
H.B. Nie, S.Y. Xu, S.J. Wang, L.P. You, Z. Yang, C.K. Ong, J. Li, and T.Y.F. Liew, Appl. Phys. A 73, 229 (2001).
K. Frisk, J. Alloys Compd. 278, 216 (1998).
X. Sun, E. Kolawa, J. Chen, J. Reid, and M.A. Nicolet, Thin Solid Films 236, 347 (1993).
Y.M. Lu, R.J. Weng, W.S. Hwang, and Y.S. Yang, Thin Solid Films 398, 356 (2001).
S.M. Rossnagel, J. Vac. Sci. Technol. B 20, 2328 (2002).
K. Baba, R. Hatada, K. Udoh, and K. Yasuda, Nucl. Instrum. Methods Phys. Res. B 127/128, 841 (1997).
N.D. Cuong, D.J. Kim, B.D. Kang, C.S. Kim, K.M. Yu, and S.G. Yoon, J. Electrochem. Soc. 153, G164 (2006).
G.S. Chen, S.T. Chen, S.C. Huang, and H.Y. Lee, Appl. Surf. Sci. 169, 353 (2001).
T. Oku, E. Kawakami, M. Uekubo, K. Takahiro, S. Yamaguchi, and M. Murakami, Appl. Surf. Sci. 99, 265 (1996).
T. Riekkinen, J. Molarius, T. Laurila, A. Nurmela, I. Suni, and J.K. Kivilahti, Microelectron. Eng. 64, 289 (2002).
M. Stavrev, D. Fischer, C. Wenzel, K. Drescher, and N. Mattern, Thin Solid Films 307, 79 (1997).
C. Stampfl and A.J. Freeman, Phys. Rev. B 71, 024111 (2005).
A. Ishikawa, T. Takata, J.N. Kondo, M. Hara, and K. Domen, J. Phys. Chem. B 108, 11049 (2004).
Y.M. Sung and H.J. Kim, Surf. Coat. Technol. 171, 75 (2003).
Y. Kuo, J. Electrochem. Soc. 139, 579 (1992).
Z. Wang, O. Yaegashi, H. Sakaue, T. Takahagi, and S. Shingubara, J. Appl. Phys. 94, 4697 (2003).
A. Arranz and C. Palacio, Surf. Interface Anal. 29, 653 (2000).
A. Proctor and M.P.A. Sherwood, Anal. Chem. 54, 13 (1982).
P. Lamour, P. Fioux, and A.A. Ponche, Surf. Interface Anal. 40, 1430 (2008).
J.C. Lin, G. Chen, and C. Lee, J. Electrochem. Soc. 146, 1835 (1999).
L.E. Thod, Transition Metal Carbides and Nitrides (New York: Academic Press, 1971).
Acknowledgements
This research was supported by the Bisa Research Grant of Keimyung University in 2014. This research was also supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIP) (No. 2011-0030058) and by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (2012-R1A1B3000784).
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Arshi, N., Lu, J., Lee, C.G. et al. Effects of Nitrogen Content on the Phase and Resistivity of TaN Thin Films Deposited by Electron Beam Evaporation. JOM 66, 1893–1899 (2014). https://doi.org/10.1007/s11837-014-1028-6
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DOI: https://doi.org/10.1007/s11837-014-1028-6