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Hydrogen Plasma-Assisted Atomic Layer Deposition of Ru with Low Oxygen Content

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Abstract

Ru is extensively used in electrical and energy applications because of its high electrical conductivity and catalytic activity. This study reports the H2 plasma-enhanced atomic layer deposition (PEALD) of Ru thin films using a novel carbonyl cyclohexadiene ruthenium precursor. The optimized process conditions for depositing Ru thin films by PEALD were established based on the growth per cycle (GPC), chemical formation, crystallinity, conformality, and resistivity, according to process parameters such as precursor pulse time, H2 plasma pulse time, purge time, and deposition temperature. Pure Ru thin films (low carbon and oxygen) were deposited with low resistivity (30.8 μΩ cm) and showed high conformality (> 95%) on the Si trenches. The oxidant-free PEALD Ru process reported in this study may have implications on the fabrication of high-quality interfaces between Ru and easily-oxidized substrates.

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The data that support the findings of this study are available from the corresponding author upon reasonable request.

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Acknowledgements

This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIT) (No. 20220R1A2C4001205), Basic Science Research Program through the National Research Foundation of Korea(NRF) funded by the Ministry of Education(NRF-2021R1A6A1A03039981), the Technology Innovation Program (No. 20010630) funded by the Ministry of Trade, Industry and Energy (MOTIE) of Korea, and Samsung Electronics Co., Ltd (IO230414-05954-01). The carbonyl cyclohexadiene ruthenium precursor was provided by Air Liquide.

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Author notes

  1. Geonwoo Park and Keunhoi Kim contributed equally to this work.

Authors and Affiliations

  1. Department of Manufacturing Systems and Design Engineering (MSDE), Seoul National University of Science and Technology, Seoul, Republic of Korea

    Geonwoo Park, Keunhoi Kim, Geongu Han & Jihwan An

  2. Energy and Environment Research Institute, Seoul National University of Science and Technology, Seoul, Republic of Korea

    Jeong Woo Shin & Jihwan An

  3. Department of Mechanical and Aerospace Engineering, Nanyang Technological University, Singapore, Singapore

    Jeong Woo Shin

  4. Department of Chemistry and Biochemistry, University of California San Diego, 9500 Gilman Dr, La Jolla, CA, 92093, USA

    Dohyun Go

  5. Department of Mechanical Engineering, Pohang University of Science and Technology (POSTECH), 77 Cheongam-ro, Nam-gu, Pohang, Gyeongbuk, 37673, Republic of Korea

    Jihwan An

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  1. Geonwoo Park
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Correspondence to Dohyun Go or Jihwan An.

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Park, G., Kim, K., Shin, J.W. et al. Hydrogen Plasma-Assisted Atomic Layer Deposition of Ru with Low Oxygen Content. Korean J. Chem. Eng. 41, 1249–1254 (2024). https://doi.org/10.1007/s11814-024-00035-2

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