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Two-photon polymerization fabrication and Raman spectroscopy research of SU-8 photoresist using the femtosecond laser

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Abstract

In this work, a two-photon polymerization (2PP) processing device was built using the femtosecond laser, and femtosecond laser direct writing was performed on SU-8 photoresist. Due to the 2PP effect of the photoresist caused by the femtosecond laser, the polymeric line with size less than the focal spot size is obtained. Based on the Raman spectroscopy characterization of SU-8 polymer before and after 2PP, we research the dynamic process of femtosecond laser induced 2PP. In Raman spectra, some scattering peaks with large intensity variation, such as 1 108 cm-1 and 1 183 cm-1, indicate that the asymmetric stretching vibration of C-O-C bond in SU-8 polymer is increased. By comparison, we can find that 2PP only affects the light absorption of initiator, but does not affect the monomer polymerization. It is helpful to understand the interaction of photoresist and femtosecond laser, and plays an important role in quantitatively controlling the polymerization degree of SU-8 polymer and improving the processing resolution of 2PP.1

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Authors and Affiliations

  1. New Energy Department, Tianjin Sino-German University of Applied Sciences, Tianjin, 300350, China

    Zi-jian Chen  (陈子坚), Ji Yao  (姚吉) & Qing-ji Xu  (徐庆继)

  2. Key Laboratory of Weak Light Nonlinear Photonics, Ministry of Education, TEDA Institute of Applied Physics, Nankai University, Tianjin, 300457, China

    Zhen-hua Wang  (王振华)

Authors
  1. Zi-jian Chen  (陈子坚)
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  2. Ji Yao  (姚吉)
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  3. Qing-ji Xu  (徐庆继)
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  4. Zhen-hua Wang  (王振华)
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Corresponding author

Correspondence to Zhen-hua Wang  (王振华).

Additional information

This work has been supported by the National Basic Research Program of China (No.2010CB934101), and the National Natural Science Foundation of China (No.11404173)

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Chen, Zj., Yao, J., Xu, Qj. et al. Two-photon polymerization fabrication and Raman spectroscopy research of SU-8 photoresist using the femtosecond laser. Optoelectron. Lett. 13, 210–213 (2017). https://doi.org/10.1007/s11801-017-7043-4

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  • DOI: https://doi.org/10.1007/s11801-017-7043-4

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