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Uncooled InAs0.09Sb0.91 photoconductors with cutoff wave-length extended to 11.5 μm

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Abstract

Uncooled InAsSb photoconductors were fabricated. The photoconductors were based on InAs0.05Sb0.95 and InAs0.09Sb0.91 thick epilayers grown on InAs substrates by melt epitaxy (ME). Ge immersion lenses were set on the photoconductors. The cutoff wavelength of InAs0.09Sb0.91 detectors is obviously extended to 11.5 µm, and that of InAs0.05Sb0.95 detectors is 8.3 µm. At room temperature, the peak detectivity of D λp* at wavelength of 6.8 µm and modulation frequency of 1 200 Hz is 1.08×109 cm·Hz1/2·W−1 for InAs0.09Sb0.91 photoconductors, the detectivity D* at wavelength of 9 µm is 7.56×108 cm·Hz1/2·W−1, and that at 11 µm is 3.92×108 cm·Hz1/2·W−1. The detectivity of InAs0.09Sb0.91 detectors at the wavelengths longer than 9 µm is about one order of magnitude higher than that of InAs0.05Sb0.95 detectors, which rises from the increase of arsenic (As) composition in InAs0.09Sb0.91 materials.

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Authors and Affiliations

  1. College of Electronics and Information Engineering, Tongji University, Shanghai, 201804, China

    Yu-zhu Gao  (高玉竹), Xiu-ying Gong  (龚秀英) & Ran Zhou  (周冉)

  2. Huaxing Infrared Device Company, Xi’an, 712099, China

    Ji-jun Li  (李继军) & Yan-bin Feng  (冯彦斌)

  3. Hamamatsu Photonics K. K., 5000 Hirakuchi, Hamakita, 434-8601, Japan

    Takamitsu Makino & Hirofumi Kan

Authors
  1. Yu-zhu Gao  (高玉竹)
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  2. Xiu-ying Gong  (龚秀英)
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  3. Ran Zhou  (周冉)
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  4. Ji-jun Li  (李继军)
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  5. Yan-bin Feng  (冯彦斌)
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  6. Takamitsu Makino
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  7. Hirofumi Kan
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Corresponding author

Correspondence to Yu-zhu Gao  (高玉竹).

Additional information

This work has been supported by the Fundamental Research Funds for the Central Universities in China.

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Gao, Yz., Gong, Xy., Zhou, R. et al. Uncooled InAs0.09Sb0.91 photoconductors with cutoff wave-length extended to 11.5 μm. Optoelectron. Lett. 11, 352–355 (2015). https://doi.org/10.1007/s11801-015-5122-y

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  • DOI: https://doi.org/10.1007/s11801-015-5122-y

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