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Effects of Mg-doping concentration on the characteristics of InGaN based solar cells

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Abstract

A major challenge in GaN based solar cell design is the lack of holes compared with electrons in the multiple quantum wells (MQWs). We find that GaN based MQW photovoltaic devices with five different Mg-doping concentrations of 0 cm−3, 5×1017 cm−3, 2×1018 cm−3, 4×1018 cm−3 and 7×1018 cm−3 in GaN barriers can lead to different hole concentrations in quantum wells (QWs). However, when the Mg-doping concentration is over 1×1018 cm−3, the crystal quality degrades, which results in the reduction of the external quantum efficiency (EQE), short circuit current density and open circuit voltage. As a result, the sample with a slight Mg-doping concentration of 5×1017 cm−3 exhibits the highest conversion efficiency.

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References

  1. David A. and Grundmann M. J., Applied Physics Letters 97, 033501 (2010).

    Article  ADS  Google Scholar 

  2. Nanishi Y., Saito Y. and Yamaguchi T., Japanese Journal of Applied Physics 42, 2549 (2003).

    Article  ADS  Google Scholar 

  3. FU Yun-ying, DAI Li-ping, WANG Shu-ya and ZHANG Guo-jun, Optoelectronics Letters 9, 278 (2013).

    Article  ADS  Google Scholar 

  4. Liu J., Wu Z. C. and Kuang S. P., Optoelectronics and Advanced Materials-Rapid Communications 7, 343 (2013).

    Google Scholar 

  5. Vos A. D., Endoreversible Thermodynamics of Solar Energy Conversion, Oxford: Oxford University Press, 90 (1992).

    Google Scholar 

  6. Jani O., Ferguson I., Honsberg C. and Kurtz S., Applied Physics Letters 91, 132117 (2007).

    Article  ADS  Google Scholar 

  7. K. A. S. M. Ehteshamul Haque, Optoelectronics Letters 9, 177 (2013).

    Article  ADS  Google Scholar 

  8. Lai K. Y., Lin G. J., Lai Y. L., Chen Y. F. and He J. H., Applied Physics Letters 96, 081103 (2010).

    Article  ADS  Google Scholar 

  9. Jampana B. R., Melton A. G., Jamil M. N., Faleev N., Opila R. L., Ferguson I. T. and Honsberg C. B., IEEE Electron Device Letters 31, 32 (2010).

    Article  ADS  Google Scholar 

  10. Zeng S. W., Cai X. M. and Zhang B. P., IEEE Journal of Quantum Electronics 46, 783 (2010).

    Article  ADS  Google Scholar 

  11. Dahal R., Pantha B., Li J., Li J. Y. and Jiang H. X., Applied Physics Letters 98, 263504 (2011).

    Article  ADS  Google Scholar 

  12. Yang C. C., Sheu J. K., Liang X. W., Huang M. S., Lee M. L., Chang K. H., Tu S. J., Huang F. W. and Lai W. C., Applied Physics Letters 97, 021113 (2010).

    Article  ADS  Google Scholar 

  13. Farrell R. M., Neufeld C. J., Cruz S. C., Lang J. R., Iza M., Keller S., Nakamura S., DenBaars S. P., Mishra U. K. and Speck J. S., Applied Physics Letters 98, 201107 (2011).

    Article  ADS  Google Scholar 

  14. Dahal R., Li J., Aryal K., Lin J. Y. and Jiang H. X., Applied Physics Letters 97, 073115 (2010).

    Article  ADS  Google Scholar 

  15. Wu L. W., Chang S. J., Wen T. C., Su Y. K., Chen J. F., Lai W. C., Kuo C. H., Chen C. H. and Sheu J. K., IEEE Journal of Quantum Electronics 38, 446 (2002).

    Article  ADS  Google Scholar 

  16. Cao X. A., Stokes E. B., Sandvik P. M., LeBoeuf S. F., Kretchmer J. and Walker D., IEEE Electron Device Letters 23, 535 (2002).

    Article  ADS  Google Scholar 

  17. Lee Y. J., Lee M. H., Cheng C. M. and Yang C. H., Applied Physics Letters 98, 263504 (2011).

    Article  ADS  Google Scholar 

  18. Jani O., Ferguson I., Honsberg C. and Kurtz S., Applied Physics Letters 91, 132117 (2007).

    Article  ADS  Google Scholar 

  19. Wierer J. J., Koleske D. D. and Lee S. R., Applied Physics Letters 100, 111119 (2012).

    Article  ADS  Google Scholar 

  20. Sang L. W., Takeguchi M., Lee W., Nakayama Y., Lozach M., Sekiguchi T. and Sumiya M., Applied Physics Express 3, 111004 (2010).

    Article  ADS  Google Scholar 

  21. Kuwahara Y., Fujii T., Fujiyama Y., Sugiyama T., Iwaya M., Takeuchi T., Kamiyama S., Akasaki I. and Amano H., Applied Physics Express 3, 111001 (2010).

    Article  ADS  Google Scholar 

  22. Rimada J. C., Hernández L., Connolly J. P. and Barnham K. W. J., Microelectronics Journal 38, 513 (2007).

    Article  Google Scholar 

Download references

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Authors and Affiliations

  1. Department of Electrical Engineering and Automation, Luoyang Institute of Science and Technology, Luoyang, 471023, China

    Gang Lu  (路纲), Bo Wang  (王波) & Yun-wang Ge  (葛运旺)

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  1. Gang Lu  (路纲)
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  2. Bo Wang  (王波)
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  3. Yun-wang Ge  (葛运旺)
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Corresponding author

Correspondence to Yun-wang Ge  (葛运旺).

Additional information

This work has been supported by the Key Scientific Research Project of Higher Education of Henan Province (No.15A510033).

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Lu, G., Wang, B. & Ge, Yw. Effects of Mg-doping concentration on the characteristics of InGaN based solar cells. Optoelectron. Lett. 11, 348–351 (2015). https://doi.org/10.1007/s11801-015-5100-4

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  • DOI: https://doi.org/10.1007/s11801-015-5100-4

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