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Fabrication and characterization of GaN/InGaN MQW solar cells

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Abstract

In this paper, the p-GaN/i-GaN–InGaN (5MQW)/n-GaN solar cell with 33 % indium composition is grown, fabricated and characterized. The X-ray diffraction, atomic force microscopy and photoluminance are performed for the solar cell. The photovoltaic parameters are short-circuit current (0.30 mA/cm2), open-circuit voltage (1.69 V), fill factor (41.3 %) and efficiency (0.21 %) under AM 1.5G illumination. The crystallite size of 379 Å and strain of 0.335 % is calculated with the help of Williamson–Hall analysis. Series resistance and shunt resistance are 62 kΩ and 0.10 MΩ, respectively.

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Authors and Affiliations

  1. Solar Energy, Pandit Deendayal Petroleum University (SSE-PDPU), Gandhinagar, Gujarat, 382007, India

    Pramila Mahala & Abhijit Ray

  2. Optoelectronic Devices Group, Council of Scientific and Industrial Research-Central Electronics Engineering Research Institute (CSIR-CEERI), Pilani, Rajasthan, 333031, India

    Sumitra Singh, Suchandan Pal, Kuldip Singh, Ashok Chauhan, Pawan Kumar, Priyavart Parjapat, Bhoopendra Kumar Kushwaha & Chenna Dhanavantri

  3. Solar Energy Research Wing, Gujarat Energy Research and Management Institute –Research, Innovation and Incubation Center (GERMI-RIIC), Gandhinagar, Gujarat, 382007, India

    Omkar Jani

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  1. Pramila Mahala
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Correspondence to Pramila Mahala or Chenna Dhanavantri.

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Mahala, P., Singh, S., Pal, S. et al. Fabrication and characterization of GaN/InGaN MQW solar cells. Appl. Phys. A 122, 639 (2016). https://doi.org/10.1007/s00339-016-0146-0

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