Skip to main content
Log in

Electroless copper plating process of N, N, N′, N′-tetrakis (2-hydroxypropyl) ethylenediamine system with high plating rate

  • Mineral Processing, Metallurgy And Chemistry
  • Published:
Journal of Central South University of Technology Aims and scope Submit manuscript

Abstract

Electroless copper plating process of N, N, N′, N′-tetrakis (2-hydroxypropyl) ethylenediamine (THPED) chelating agent was researched comprehensively. The results indicate that plating rate decreases with the increase of concentration for THPED, CuSO4 · 5H2O and HCHO, pH value and bath temperature. The additive of K4[Fe(CN)6] · 3H2O, 2, 2′-dipyridyl and polyethylene glycol(PEG) decrease plating rate and K4[Fe(CN)6] · 3H2O has a bad effect on deposits quality, but 2, 2′-dipyridyl and PEG make deposits quality improve greatly. Low concentration of 2-mercaptobenzothiozole (2-MBT) increases plating rate and improves deposits quality, but decreases plating rate and worsens deposits quality when 2-MBT reaches 5 mg/L. The optimal conditions of this electroless copper plating process are that the concentration of THPED, HCHO, CuSO4 · 5H2O, PEG, 2, 2′-dipyridyl and 2-MBT are 16.8 g/L, 16.0 mL/L, 13.3 g/L, 0.5 g/L, 5.0 mg/L and 2.0 mg/L, respectively, pH value is 12.75, bath temperature is 30 °C. Plating rate reaches 9.54 µm/h plating for 30 min in the bath. The SEM images demonstrate that the surface of copper film is smooth and the crystal is fine.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Similar content being viewed by others

References

  1. Karthikeyan S, Vasudevan T, Srinivasan K N, et al. Studies on formaldehyde free electroless copper deposition[J]. Plating and Surface Finishing, 2002, 89(7): 54–56.

    Google Scholar 

  2. ZHENG Ya-jie, GONG Zhu-qing, CHEN Bai-zhen, et al. Hole metallization in printed circuit board and potential for technological improvements[J]. Materials Review, 2003, 17(4): 11–13. (in Chinese)

    Google Scholar 

  3. Ando S, Endoh M, Nakamura T, et al. Electrolytic Copper-plated R-T-B Magnet and Plating Method Thereof[P]. US Patent, 6866765. 2005-03-15.

  4. Donahue F M, Sajkowski D J, Bosio A C, et al. Kinetics of electroless copper plating-6, inhibiton by adsorption of ligand[J]. Journal of the Electrochemical Society, 1982, 129(4): 717–719.

    Article  Google Scholar 

  5. ZHENG Ya-jie, XIAO Fa-xin, YI Dan-qing, et al. Preparation of salt-based colloid palladium of high concentration[J]. Trans Nonferrous Met Soc China, 2005, 15(1): 190–194. (in Chinese)

    Google Scholar 

  6. ZHENG Ya-jie, XIAO Fa-xin, YI Dan-qing, et al. The effect of additives on salt-based colloid palladium and stability[J]. Material Protect, 2004, 37(12): 11–13. (in Chinese)

    Google Scholar 

  7. WU Xue-gao, LI Ming-hua. Electroless Plating Technology[M]. Chengdu: Sichuan Science and Technology Press, 1985. (in Chinese)

    Google Scholar 

  8. Vaskelis A, Norkus E, Stalnioniene I, et al. Effect of the Cu electrode formation conditions and surface nanoscale roughness on formaldehyde anodic oxidation[J]. Electrochimica Acta, 2004, 49: 1613–1621.

    Article  Google Scholar 

  9. Orhan G, Gürmen S, Timur S. The behavior of organic components in copper recovery from electroless plating bath effluents using 3D electrode systems[J]. Journal of Hazardous Materials, 2004, B112: 261–267.

    Article  Google Scholar 

  10. Mishra K G, Paramquru R K. Kinetics and mechanism of electroless deposition of copper[J]. Journal of the Electrochemical Society, 1996, 143(2): 510–516.

    Article  Google Scholar 

  11. WU Xue-gao. Plastic Electroplating Technology[M]. Chengdu: Sichuan Science and Technology Publishing Company, 1983. (in Chinese)

    Google Scholar 

  12. WANG Li-li. Electroless copper plating[J]. Electroplating and Finishing, 1996, 18(2): 38–41. (in Chinese)

    MathSciNet  Google Scholar 

  13. Oita M, Matsuoka M, Iwakura C. Deposition rate and morphology of electroless copper film from solutions containing 2, 2′-dipyridyl[J]. Electrochimica Acta, 1997, 42(9): 1435–1440.

    Article  Google Scholar 

  14. HU Guang-hui, YANG Fang-zu, WU Hui-huang. The effect of additives on electroless copper plating on ceramic surface[J]. Electroplating and Finishing, 2002, 21(3): 24–28. (in Chinese)

    Google Scholar 

  15. YU Shang-yin, QIN Xiao-ci. Study on the technology and mechanism of electroless copper plating on 96Al2O3 ceramic[J]. Journal of Xi’an Jiaotong University, 1995, 29(1): 34–40. (in Chinese)

    Google Scholar 

  16. Nuzzi F J. Accelerating the rate of electroless copper plating[J]. Plating and Surface Finishing, 1983, 70(1): 51–54.

    Google Scholar 

  17. Hanna F, Hamid Z A, Aal A A. Controlling factors affecting the stability and rate of electroless copper plating[J]. Materials Letters, 2003, 58: 104–109.

    Article  Google Scholar 

Download references

Author information

Authors and Affiliations

Authors

Corresponding author

Correspondence to Zheng Ya-jie PhD.

Additional information

Foundation item: Project supported by Hubei Daye Nonferrous Metal Corporation of China

Rights and permissions

Reprints and permissions

About this article

Cite this article

Zheng, Yj., Zou, Wh., Yi, Dq. et al. Electroless copper plating process of N, N, N′, N′-tetrakis (2-hydroxypropyl) ethylenediamine system with high plating rate. J Cent. South Univ. Technol. 12 (Suppl 1), 82–87 (2005). https://doi.org/10.1007/s11771-005-0377-2

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s11771-005-0377-2

Key words

CLC number

Navigation