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Improved modeling method to account for the kink effect of gaas phemts

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Journal of Electronics (China)

An Erratum to this article was published on 01 November 2011

Abstract

Short gate-length High Electron Mobility Transistors (HEMTs) have been observed to exhibit kinks in their drain current-voltage (I–V) characteristics. To model this nonlinear effect, we present an effective approach that is easily incorporated into most existing empirical HEMT I–V models. This has been done by modifying the channel length modulation parameter (λ) to account for the kink effect. Moreover, the definitions of the left parameters in the original model will not be influenced, and the improved HEMT I–V model enhances its bias range of operation for which accuracy is maintained. The proposed modeling method is validated through DC/ Pulsed I–V as well as large-signal power measurements.

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Authors and Affiliations

  1. School of Electronic Engineering, University of Electronic Science and Technology of China, Chengdu, 611731, China

    Linsheng Liu

  2. Chengdu R&D Center, Ericsson (China) Communications Co., Ltd., Chengdu, 610041, China

    Junhong Wu

  3. Nokia Siemens Networks (Chengdu) Technology R&D Center, Chengdu, 610041, China

    Junhong Wu

  4. School of Electronic Engineering, University of Electronic Science and Technology of China, 2006 Xiyuan Avenue, Chengdu, 611731, China

    Linsheng Liu

Authors
  1. Linsheng Liu
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  2. Junhong Wu
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Correspondence to Linsheng Liu.

Additional information

Communication author: Liu Linsheng, born in 1983, male, Ph.D..

An erratum to this article can be found at http://dx.doi.org/10.1007/s11767-012-1005-6.

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Liu, L., Wu, J. Improved modeling method to account for the kink effect of gaas phemts. J. Electron.(China) 28, 389–395 (2011). https://doi.org/10.1007/s11767-011-0549-1

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  • DOI: https://doi.org/10.1007/s11767-011-0549-1

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