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Monte Carlo modelling of noise in advanced III–V HEMTs

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Abstract

One of the main objectives of modern Microelectronics is the fabrication of devices with increased cutoff frequency and decreased level of noise. At this moment, the best devices for high-frequency, low-noise behavior are High electron mobility transistors (HEMTs) based on InGaAs and InAs channels. In this work, a complete analysis of ultra-short-gate HEMTs has been carried out by using a semiclassical Monte Carlo simulator, paying special attention to the noise performance. The validity of the model has been checked through the comparison of the simulated results with static, dynamic and noise measurements in real HEMTs. In order to reproduce the experimental results, we have included in the model some important real effects such as degeneracy, surface charges, presence of dielectrics and contact parasitics. The cryogenic performance of the HEMTs has also been analyzed. The influence of the parasitic resistances, width of the devices, value of the \(\delta \)-doping and recess length has been analyzed when scaling down the gate length of the transistors to 50 nm aiming at achieving higher cutoff frequencies and better noise performance. The important effect of the impact ionization mechanisms and the consequent kink effect on the noise in both InGaAs and InAs based HEMTs have also been studied. Finally the advantages of the use of a double gate topology are quantified.

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Acknowledgments

The authors dedicate this paper to the memory of our beloved and respected Prof. Daniel Pardo, recently deceased, whose contribution was of key importance not only for the development of the models described here but also for his enthusiastic everyday efforts to push us to improve further. This work was performed in close collaboration with A. Cappy, S. Bollaert, V. Hoel, N. Wichtmann, X. Wallart, Y. Roelens, T. Parenty and F. Danneville (IEMN, France), J. Grahn, J. Schleeh, G. Moschetti, P.Å. Nilsson and N. Wadefalk (Chalmers University of Technology, Sweden) who fabricated the devices, provided the experimental data and contributed to the interpretation of the results. It was supported partially by the Spanish Ministerio de Economía y Competitividad through Project TEC2013-41640-R and by the Consejería de Educación de la Junta de Castilla y León through Project SA052U13.

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Authors and Affiliations

  1. Departamento de Física Aplicada, Universidad de Salamanca, Plaza de la Merced s/n, 37008, Salamanca, Spain

    J. Mateos, B. G. Vasallo & T. González

  2. Department of Microtechnology and Nanoscience, Chalmers University of Technology, Göteborg, Sweden

    H. Rodilla

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  1. J. Mateos
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  2. H. Rodilla
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  3. B. G. Vasallo
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  4. T. González
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Correspondence to J. Mateos.

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Mateos, J., Rodilla, H., Vasallo, B.G. et al. Monte Carlo modelling of noise in advanced III–V HEMTs. J Comput Electron 14, 72–86 (2015). https://doi.org/10.1007/s10825-014-0653-1

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