Properties and applications of quantum dot heterostructures grown by molecular beam epitaxy

Henini, M.

doi:10.1007/s11671-006-9017-5

Nano review
Open Access
Published: 26 July 2006

Properties and applications of quantum dot heterostructures grown by molecular beam epitaxy

M. Henini¹

Nanoscale Research Letters volume 1, Article number: 32 (2006) Cite this article

3031 Accesses
33 Citations
Metrics details

Abstract

One of the main directions of contemporary semiconductor physics is the production and study of structures with a dimension less than two: quantum wires and quantum dots, in order to realize novel devices that make use of low-dimensional confinement effects. One of the promising fabrication methods is to use self-organized three-dimensional (3D) structures, such as 3D coherent islands, which are often formed during the initial stage of heteroepitaxial growth in lattice-mismatched systems. This article is intended to convey the flavour of the subject by focussing on the structural, optical and electronic properties and device applications of self-assembled quantum dots and to give an elementary introduction to some of the essential characteristics.

[1–67]

References

Reed MA, et al.: Phys. Rev. Lett.. 1988, 60: 535. COI number [1:CAS:528:DyaL1cXitFSnsLY%3D] 10.1103/PhysRevLett.60.535
Article Google Scholar
Ashoori RC, et al.: Phys. Rev. Lett.. 1992, 68: 3088. COI number [1:CAS:528:DyaK38XktFynt7s%3D] 10.1103/PhysRevLett.68.3088
Article Google Scholar
Bimberg D, Grundmann M, Ledetsov NN: Quantum Dot Heterostructures. Wiley, Chichester; 1998.
Google Scholar
Chu L, et al.: Appl. Phys. Lett.. 1999, 75: 3599. COI number [1:CAS:528:DyaK1MXnsFyrsLY%3D] 10.1063/1.125400
Article Google Scholar
Muto S: Jpn. J. Appl. Phys.. 1995, 34: 210. 10.1143/JJAP.34.L210
Article Google Scholar
Sugiyama Y, et al.: Physica E. 2000, 7: 503. COI number [1:CAS:528:DC%2BD3cXktVaku78%3D] 10.1016/S1386-9477(99)00366-5
Article Google Scholar
Henini M, et al.: Microelectron. J.. 1997, 28: 933. 10.1016/S0026-2692(96)00132-2
Article Google Scholar
Kitamura N, et al.: Appl. Phys. Lett.. 1995, 66: 3663. COI number [1:CAS:528:DyaK2MXmsFSks7g%3D] 10.1063/1.114133
Article Google Scholar
Miu DSL, et al.: Appl. Phys. Lett.. 1995, 66: 1620. 10.1063/1.113871
Article Google Scholar
Jeppesen S, et al.: Appl. Phys. Lett.. 1996, 68: 2228. COI number [1:CAS:528:DyaK28Xitlyhtrs%3D] 10.1063/1.115867
Article Google Scholar
Sugiyama Y, et al.: Jpn. J. Appl. Phys.. 1996, 35: 1320. COI number [1:CAS:528:DyaK28XisFSqurs%3D] 10.1143/JJAP.35.1320
Article Google Scholar
Solomon GS, et al.: Phys. Rev. Lett.. 1996, 76: 952. COI number [1:CAS:528:DyaK28Xotl2htw%3D%3D] 10.1103/PhysRevLett.76.952
Article Google Scholar
Notzel R, et al.: Jpn. J. Appl. Phys. Part 2. 1994, 33: L275. COI number [1:CAS:528:DyaK2cXivVGgtb8%3D] 10.1143/JJAP.33.L275
Article Google Scholar
Notzel R, et al.: Nature (London). 1994, 369: 131. 10.1038/369131a0
Article Google Scholar
Notzel R, et al.: Appl. Phys. Lett.. 1994, 65: 457. 10.1063/1.113021
Article Google Scholar
Nishi K, et al.: J. Appl. Phys.. 1996, 80: 3466. COI number [1:CAS:528:DyaK28XlslWht7g%3D] 10.1063/1.363216
Article Google Scholar
Lubyshev DI, et al.: J. Vac. Sci. Tech. B. 1996, 14: 2212. COI number [1:CAS:528:DyaK28XktVCjtLo%3D] 10.1116/1.588902
Article Google Scholar
Reaves CM, et al.: Appl. Phys. Lett.. 1996, 69: 3878. COI number [1:CAS:528:DyaK28XnsF2hsrk%3D] 10.1063/1.117135
Article Google Scholar
Henini M, et al.: Phys. Rev. B. 1998, 57: R6815. COI number [1:CAS:528:DyaK1cXhvVeisrw%3D] 10.1103/PhysRevB.57.R6815
Article Google Scholar
Nishi K, et al.: Appl. Phys. Lett.. 1997, 70: 3579. COI number [1:CAS:528:DyaK2sXkt1Grs7k%3D] 10.1063/1.119239
Article Google Scholar
Moison JM, et al.: Appl. Phys. Lett.. 1994, 64: 196. COI number [1:CAS:528:DyaK2cXitVGksb0%3D] 10.1063/1.111502
Article Google Scholar
Zou J, et al.: Phys. Rev. B. 1999, 59: 12273. 10.1103/PhysRevB.59.12279
Article Google Scholar
Ruvimov S, et al.: Phys. Rev. Lett.. 2000, 84: 334. 10.1103/PhysRevLett.84.334
Article Google Scholar
Liu N, et al.: Phys. Rev. Lett.. 2000, 84: 334. COI number [1:CAS:528:DC%2BD3cXisFWhsg%3D%3D] 10.1103/PhysRevLett.84.334
Article Google Scholar
Yang W, et al.: Phys. Rev. B. 2000, 61: 2784. COI number [1:CAS:528:DC%2BD3cXns1Sltw%3D%3D] 10.1103/PhysRevB.61.2784
Article Google Scholar
Garcıa JM, et al.: Appl. Phys. Lett.. 1997, 71: 2014. 10.1063/1.119772
Article Google Scholar
Takehana K, et al.: J. Cryst. Growth. 2003, 251: 155. COI number [1:CAS:528:DC%2BD3sXitlWmu7k%3D] 10.1016/S0022-0248(02)02407-7
Article Google Scholar
Kamiya I, et al.: J. Crystal Growth. 1999, 201/202: 1146. COI number [1:CAS:528:DyaK1MXivF2qsb8%3D] 10.1016/S0022-0248(99)00005-6
Article Google Scholar
Patane A, et al.: Superlattices Microstruct.. 1999,25(1/2):113. COI number [1:CAS:528:DyaK1MXhtlequ7g%3D] 10.1006/spmi.1998.0622
Article Google Scholar
Kawabe M, et al.: Jap. J. Appl. Phys.. 1997, 36: 4078. COI number [1:CAS:528:DyaK2sXkvFGgsL4%3D] 10.1143/JJAP.36.4078
Article Google Scholar
Henini M, et al.: Microelectron. J.. 2002, 33: 313. COI number [1:CAS:528:DC%2BD38XitFamtb0%3D] 10.1016/S0026-2692(01)00124-0
Article Google Scholar
A. Polimeni et al., Phys. Rev. B 59, 5064 (1999); A. Patane et al., Appl. Phys. Lett. 75, 814 (1999)
Article Google Scholar
Snell BR, et al.: Phys. Rev. Lett.. 1987, 59: 2806. COI number [1:CAS:528:DyaL1cXos1Sisw%3D%3D] 10.1103/PhysRevLett.59.2806
Article Google Scholar
R.K. Hayden et al., Phys. Rev. Lett. 66, 1749 (1991); O.H. Hughes et al., J. Vac. Sci. Technol. B7, 1041 (1989)
Article Google Scholar
J. Wang et al., Phys. Rev. Lett. 73, 1146 (1994); P. Beton et al., Phys. Rev. Lett. 75, 1996 (1995)
Article Google Scholar
Sakai JWL, et al.: Phys. Rev. B. 1993, 48: 5664. COI number [1:CAS:528:DyaK3sXms1Sht7s%3D] 10.1103/PhysRevB.48.5664
Article Google Scholar
Crommie MF, et al.: Nature. 1993, 262: 218. COI number [1:CAS:528:DyaK3sXms1ShtLo%3D]
Google Scholar
Patanè A, et al.: Phys. Rev. B. 2000, 62: 13595. 10.1103/PhysRevB.62.13595
Article Google Scholar
Vdovin EE, et al.: Science. 2000, 290: 124. 10.1126/science.290.5489.122
Article Google Scholar
Main PC, et al.: Phys. Rev. lett.. 2000, 84: 729. COI number [1:CAS:528:DC%2BD3cXlvVKmtQ%3D%3D] 10.1103/PhysRevLett.84.729
Article Google Scholar
Levin A, et al.: Phys. Stat. Sol.. 2001, 224: 715. COI number [1:CAS:528:DC%2BD3MXisFansrY%3D] 10.1002/(SICI)1521-3951(200104)224:3<715::AID-PSSB715>3.0.CO;2-L
Article Google Scholar
Bimberg D, et al.: Quantum Dot Heterostructures. John Wiley & Sons, New York; 1999.
Google Scholar
Stier O, et al.: Phys. Rev. B. 1999, 59: 5688. COI number [1:CAS:528:DyaK1MXhtF2msLc%3D] 10.1103/PhysRevB.59.5688
Article Google Scholar
Wang LW, et al.: Phys. Rev. B. 1999, 59: 5678. COI number [1:CAS:528:DyaK1MXhtF2msLY%3D] 10.1103/PhysRevB.59.5678
Article Google Scholar
Zh.I. Alferov et al., Sov. Phys. Semicond. 4, 1573 (1970); Zh.I. Alferov et al., Fiz. Tekh. Poluprovodn. 4, 1826 (1970); I. Hayashi et al., Appl. Phys. Lett. 17, 109 (1970); R. C. Miller et al., J. Appl. Phys. 47, 4509 (1976); R.D. Dupuis et al., Appl. Phys. Lett. 32, 295 (1978); W.T. Tsang, Appl. Phys. Lett. 39, 786 (1981); Zh.I. Alferov et al., Pis’ma v Z.Tekn. Fiz. 14, 1803 (1988); N. Chand et al., Appl. Phys. Lett. 58, 1704 (1991); N. Kirstaedter et al., Electron. Lett. 30, 1416 (1994); N.N. Ledentsov et al., Phys. Rev. B 54, 8743 (1996); G.T. Liu et al., Electron. Lett. 35, 1163 (1999); R.L. Sellin et al., Appl. Phys. Lett. 78, 1207 (2001)
Google Scholar
D. Bimberg et al., MRS Bulletin July 2002, p. 531
Sellin RL, et al.: Appl. Phys. Lett.. 2001, 78: 1207. COI number [1:CAS:528:DC%2BD3MXhtl2gur4%3D] 10.1063/1.1350596
Article Google Scholar
Kirstaedter N, et al.: Electron. Lett.. 1994, 30: 1416. COI number [1:CAS:528:DyaK2MXhvFygtr4%3D] 10.1049/el:19940939
Article Google Scholar
Shoji H, et al.: IEEE Photon. Technol. Lett.. 1995, 7: 1385. 10.1109/68.477257
Article Google Scholar
Alferov ZI, et al.: Semiconductors. 1996, 30: 193.
Google Scholar
Ledentsov NN, et al.: Phys. Rev. B. 1996, 54: 8743. COI number [1:CAS:528:DyaK28Xmt1Oisrs%3D] 10.1103/PhysRevB.54.8743
Article Google Scholar
Xie Q, et al.: IEEE Photon. Technol. Lett.. 1996, 8: 965. 10.1109/68.508705
Article Google Scholar
Huang X, et al.: Electron. Lett.. 2001, 36: 41. 10.1049/el:20000124
Article Google Scholar
Chand N, et al.: Appl. Phys. Lett.. 1991, 58: 1704. COI number [1:CAS:528:DyaK3MXitlOhsb0%3D] 10.1063/1.105114
Article Google Scholar
Heinrichsdorff H, et al.: Appl. Phys. Lett.. 2000, 76: 556. COI number [1:CAS:528:DC%2BD3cXnsValtA%3D%3D] 10.1063/1.125816
Article Google Scholar
Sellin RL, et al.: Electron. Lett.. 2002, 38: 883. COI number [1:CAS:528:DC%2BD38Xns1WisLs%3D] 10.1049/el:20020602
Article Google Scholar
Ustinov VM, et al.: Tech. Phys. Lett.. 1998, 24: 49. COI number [1:CAS:528:DyaK1cXis1Citb0%3D] 10.1134/1.1261977
Article Google Scholar
Hunzer K, et al.: J. Appl. Phys.. 2000, 87: 1496. 10.1063/1.372040
Article Google Scholar
Park G, et al.: Appl. Phys. Lett.. 1999, 75: 3267. COI number [1:CAS:528:DyaK1MXnsVaksb0%3D] 10.1063/1.125320
Article Google Scholar
Huffuker DL, et al.: Appl. Phys. Lett.. 1998, 73: 2564. 10.1063/1.122534
Article Google Scholar
Mukai K, et al.: IEEE J. Quantum Electon.. 2000, 36: 472. COI number [1:CAS:528:DC%2BD3cXisVSntrk%3D] 10.1109/3.831025
Article Google Scholar
Ustinov VM, et al.: Appl. Phys. Lett.. 1999, 74: 2815. COI number [1:CAS:528:DyaK1MXivV2nur4%3D] 10.1063/1.124023
Article Google Scholar
Huang X, et al.: Electron. Lett.. 2000, 36: 41. COI number [1:CAS:528:DC%2BD3cXhsF2gu7c%3D] 10.1049/el:20000124
Article Google Scholar
Kovsh AR, et al.: Electron. Lett.. 2002, 38: 1104. COI number [1:CAS:528:DC%2BD38XoslWjtLw%3D] 10.1049/el:20020793
Article Google Scholar
Jang JW, et al.: Appl. Phys. Lett.. 2004, 85: 3675. COI number [1:CAS:528:DC%2BD2cXptFehsrs%3D] 10.1063/1.1812365
Article Google Scholar
Maksimov MV, et al.: Semiconductors. 2004, 38: 732. COI number [1:CAS:528:DC%2BD2cXkvVejsLY%3D] 10.1134/1.1766381
Article Google Scholar
Wilk A, et al.: J. Cryst. Growth. 2005, 278: 335. COI number [1:CAS:528:DC%2BD2MXjsVelt78%3D] 10.1016/j.jcrysgro.2005.01.040
Article Google Scholar

Download references

Acknowledgments

This work is supported by the Engineering and Physical Sciences Research Council (U.K.) and the SANDiE Network of Excellence of the European Commission (Contract no. NMP4-CT-2004-500101). I am grateful to L. Eaves, A. Patane, A. Polimeni, P.C. Main, K. Takehana, F. Pulizzi, A. Levin, S. Sanguinetti, M. Guzzi, M.D. Upward, P. Moriarty, M. Al-Khafaji, A.G. Cullis, E.E. Vdovin, Yu.N. Khanin, Yu.V. Dubrovskii, G. Hill, D. Granados, J.M. Garcia, N.N. Ledenstov and D. Bimberg for their contribution to this work.

Author information

Authors and Affiliations

School of Physics and Astronomy, University of Nottingham, Nottingham, NG7 2RD, UK
M. Henini

Authors

M. Henini
View author publications
You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to M. Henini.

Rights and permissions

Open Access This article is distributed under the terms of the Creative Commons Attribution 2.0 International License ( https://creativecommons.org/licenses/by/2.0 ), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Reprints and Permissions

About this article

Cite this article

Henini, M. Properties and applications of quantum dot heterostructures grown by molecular beam epitaxy. Nanoscale Res Lett 1, 32 (2006). https://doi.org/10.1007/s11671-006-9017-5

Download citation

Published: 26 July 2006
DOI: https://doi.org/10.1007/s11671-006-9017-5

Keywords

Heterostructures
Semiconductors
Self-assembly
Quantum dots
Lasers
Optoelectronics