Abstract
We report on the growth and characterization of lateral InAs/GaAs (001) quantum-dot molecules (QDMs) suitable for single QDM optical spectroscopy. The QDMs, forming by depositing InAs on GaAs surfaces with self-assembled nanoholes, are aligned along the [] direction. The relative number of isolated single quantum dots (QDs) is substantially reduced by performing the growth on GaAs surfaces containing stepped mounds. Surface morphology and X-ray measurements suggest that the strain produced by InGaAs-filled nanoholes superimposed to the strain relaxation at the step edges are responsible for the improved QDM properties. QDMs are Ga-richer compared to single QDs, consistent with strain- enhanced intermixing. The high optical quality of single QDMs is probed by micro-photoluminescence spectroscopy in samples with QDM densities lower than 108 cm−2.
Avoid common mistakes on your manuscript.
References
Reina JH, Quiroga L, Johnson NF: Phys. Rev. A. 2000, 62: 012305. 10.1103/PhysRevA.62.012305
Burkard G, Loss D: Phys. Rev. B. 1999, 59: 2070. COI number [1:CAS:528:DyaK1MXkt12rug%3D%3D] 10.1103/PhysRevB.59.2070
Shtrichman I, Metzner C, Gerardot BD, Schoenfeld WV, Petroff PM: Phys. Rev. B. 2002, 65: 081303. 10.1103/PhysRevB.65.081303
Krenner HJ, Sabathil M, Clark EC, Kress A, Schuh D, Bichler M, Abstreiter G, Finley JJ: Phys. Rev. Lett.. 2005, 94: 057402. COI number [1:STN:280:DC%2BD2M7ls1Oitw%3D%3D] 10.1103/PhysRevLett.94.057402
Gerardot BD, Strauf S, de Dood MJA, Bychkov AM, Badolato A, Hennessy K, Hu EL, Bouwmeester D, Petroff PM: Phys. Rev. Lett.. 2005, 95: 137403. 10.1103/PhysRevLett.95.137403
Stinaff EA, Scheibner M, Bracker AS, Ponomarev IV, Korenev VL, Ware ME, Doty MF, Reinecke TL, Gammon D: Science. 2006, 311: 636. COI number [1:CAS:528:DC%2BD28XptVykug%3D%3D] 10.1126/science.1121189
Unold T, Mueller K, Lienau Ch, Elsaesser T, Wieck AD: Phys. Rev. Lett.. 2005, 94: 137404. 10.1103/PhysRevLett.94.137404
Songmuang R, Kiravittaya S, Schmidt OG: Appl. Phys. Lett.. 2003, 82: 2892. COI number [1:CAS:528:DC%2BD3sXjtlSisrw%3D] 10.1063/1.1569992
Lippen Tv, Nötzel R, Hamhuis GJ, Wolter JH: J. Appl. Phys.. 2005, 97: 044301. 10.1063/1.1840098
Schmidt OG, Deneke Ch, Kiravittaya S, Songmuang R, Heidemeyer H, Nakamura Y, Zapf-Gottwick R, Müller C, Jin-Phillipp NY: IEEE J. Sel. Top. Quant. Electron.. 2002, 8: 1025. COI number [1:CAS:528:DC%2BD38XpsVOgtb0%3D] 10.1109/JSTQE.2002.804235
Kiravittaya S, Songmuang R, Jin-Phillipp NY, Panyakeow S, Schmidt OG: J. Cryst. Growth. 2003, 251: 258. COI number [1:CAS:528:DC%2BD3sXitlWls7g%3D] 10.1016/S0022-0248(02)02475-2
Krause B, Metzger TH, Rastelli A, Songmuang R, Kiravittaya S, Schmidt OG: Phys. Rev. B. 2005, 72: 085339. 10.1103/PhysRevB.72.085339
Schuler H, Kaneko T, Lipinski M, Eberl K: Semicond. Sci. Technol.. 2000, 15: 169. COI number [1:CAS:528:DC%2BD3cXhtlSjs70%3D] 10.1088/0268-1242/15/2/316
Rastelli A, Ulrich SM, Pavelescu E-M, Leinonen T, Pessa M, Michler P, Schmidt OG: Superlatt. Microstruct.. 2004, 36: 181. COI number [1:CAS:528:DC%2BD2cXpsVKhsb8%3D] 10.1016/j.spmi.2004.08.024
L. Wang, A. Rastelli, O.G. Schmidt, J. Appl. Phys. (in press)
A. Rastelli, S. Kiravittaya, L. Wang, C. Bauer, O.G. Schmidt, Physica E 32, 29 (2006)
Cho SO, Wang ZhM, Salamo GJ: Appl. Phys. Lett.. 2005, 86: 113106. 10.1063/1.1883709
Placidi E, Arciprete F, Sessi V, Fanfoni M, Patella F, Balzarotti A: Appl. Phys. Lett.. 2005, 86: 241913. 10.1063/1.1946181
Lita B, Goldmana RS, Phillips JD, Bhattacharya PK: Appl. Phys. Lett.. 1999, 75: 2797. COI number [1:CAS:528:DyaK1MXmslOgtrY%3D] 10.1063/1.125153
Schmidt OG, Eberl K: Phys. Rev. B. 2000, 61: 13721. COI number [1:CAS:528:DC%2BD3cXjs1Smt7k%3D] 10.1103/PhysRevB.61.13721
Biasiol G, Kapon E: Phys. Rev. Lett.. 1998, 81: 2962. COI number [1:CAS:528:DyaK1cXmsFyit7g%3D] 10.1103/PhysRevLett.81.2962
Kiravittaya S, Heidemeyer H, Schmidt OG: Appl. Phys. Lett.. 2005, 86: 263113. 10.1063/1.1954874
Garcia JM, Mankad T, Holtz PO, Wellman PJ, Petroff PM: Appl. Phys. Lett.. 1998, 72: 3172. COI number [1:CAS:528:DyaK1cXjsFCktrk%3D] 10.1063/1.121583
Beirne GJ, Hermannstädter C, Wang L, Rastelli A, Schmidt OG, Michler P: Phys. Rev. Lett.. 2006, 96: 137401. COI number [1:STN:280:DC%2BD283osFSmsQ%3D%3D] 10.1103/PhysRevLett.96.137401
Acknowledgment
This work was financially supported by SFB/TR21 and BMBF (03N8711).
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
Open Access This article is distributed under the terms of the Creative Commons Attribution 2.0 International License ( https://creativecommons.org/licenses/by/2.0 ), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
About this article
Cite this article
Wang, L., Rastelli, A., Kiravittaya, S. et al. Guided self-assembly of lateral InAs/GaAs quantum-dot molecules for single molecule spectroscopy. Nanoscale Res Lett 1, 74 (2006). https://doi.org/10.1007/s11671-006-9003-y
Published:
DOI: https://doi.org/10.1007/s11671-006-9003-y