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Electrostrain Enhancement at Tricritical Point for BaTi1−xHfxO3 Ceramics

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Abstract

The maximum electromechanical property of piezoelectric ceramic is normally achieved at morphotropic phase boundary. Herein, we found that a maximum electrostrain is obtained in single rhombohedral phase region at the tricritical point (which is a single rhombohedral phase at room temperature) for BaTi1−xHfxO3 ceramics. The mechanism for electrostrain enhancement at tricritical point (TTP) was uncovered by analyzing its crystallographic feature. The results show that TTP (x = 0.11) exhibits largest electrostrain (S = 0.063%) at room temperature. And the TTP reveals a maximum crystallite size (66.3 nm) and minimum lattice strain (0.7 × 10−4). Further Raman results demonstrate a lowest Raman intensity occurs at TTP, which confirmed the specific crystallographic behavior. Therefore, a minimum lattice strain-induced low elastic energy could lower landau free energy, which is responsible for electrostrain enhancement at TTP. This work may provide a new insight for understanding and designing large electromechanical ceramics.

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Acknowledgments

Authors would like to acknowledge Dr. Y. Matsushita, Research Network and Facility Services Division, National Institute for Materials Science (NIMS), Japan, for providing the XRD facility. Authors are also grateful to all MMRC members for helpful discussions. Shailendra Rajput is thankful to Israeli Council for Higher Education (CHE) for fellowship. Authors thank Yongbin Liu for SEM facility. Financial support from the program of China Scholarships Council, Natural Science Foundation of China (Grant No. 51471127) and Research Foundation for Advanced Talents (Grant. 5501110013) is acknowledged.

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Author notes

  1. Xinghao Hu and Shailendra Rajput have contributed equally to this work.

Authors and Affiliations

  1. State Key Laboratory of Electrical Insulation and Power Equipment and Multi-disciplinary Materials Research Center, Frontier Institute of Science and Technology, Xi’an Jiaotong University, Xi’an, 710049, China

    Xinghao Hu, Shailendra Rajput, Junning Li, Wenjia Wang, Luo Zhao, Jinghui Gao, Lisheng Zhong & Xiaobing Ren

  2. Institute of Intelligent Flexible Mechatronics, Jiangsu University, Zhenjiang, 212013, China

    Xinghao Hu

  3. Department of Electric/Electronic Engineering, Ariel University, 40700, Ariel, Israel

    Shailendra Rajput

  4. Department of Physics, C.V. Raman College of Engineering, Bhubaneswar, Odisha, 752054, India

    Sabyasachi Parida

  5. Ferroic Physics Group, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki, 305-0047, Japan

    Xiaobing Ren

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  1. Xinghao Hu
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Hu, X., Rajput, S., Parida, S. et al. Electrostrain Enhancement at Tricritical Point for BaTi1−xHfxO3 Ceramics. J. of Materi Eng and Perform 29, 5388–5394 (2020). https://doi.org/10.1007/s11665-020-05003-5

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