Correction to: JMEPEG (2018) 27:2960–2966 https://doi.org/10.1007/s11665-018-3397-4

Readers should note the following corrections to this article:

  1. (1)

    Page 4, Fig. 3 caption: SEM micrographs on the polished surfaces of S-SiC sintered at (a) 1950 °C, (b) 2050 °C, (c) 2150 °C and (d) 2180 °C.

  2. (2)

    Page 4, Fig. 4 caption: Microstructure of S-SiC sintered at (a) 1950 °C, (b) 2050 °C, (c) 2150 °C and (d) 2180 °C.

  3. (3)

    Page 5, Table 2: The numeric value in the second row of third column should be 2046 ± 80 instead of 20.46 ± 80.