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Exploring the Short-Channel Characteristics of Asymmetric Junctionless Double-Gate Silicon-on-Nothing MOSFET

  • Priyanka Saha
  • Pritha Banerjee
  • Dinesh Kumar Dash
  • Subir Kumar Sarkar
Article
  • 27 Downloads

Abstract

This paper presents an analytical model of an asymmetric junctionless double-gate (asymmetric DGJL) silicon-on-nothing metal-oxide-semiconductor field-effect transistor (MOSFET). Solving the 2-D Poisson’s equation, the expressions for center potential and threshold voltage are calculated. In addition, the response of the device toward the various short-channel effects like hot carrier effect, drain-induced barrier lowering and threshold voltage roll-off has also been examined along with subthreshold swing and drain current characteristics. Performance analysis of the present model is also demonstrated by comparing its short-channel behavior with conventional DGJL MOSFET. The effect of variation of the device features due to the variation of device parameters is also studied. The simulated results obtained using 2D device simulator, namely ATLAS, are in good agreement with the analytical results, hence validating our derived model.

Keywords

asymmetric DIBL junctionless Silicon-on-Nothing subthreshold swing threshold voltage roll-off 

Notes

Acknowledgments

Priyanka Saha thankfully acknowledges the financial support as PhD fellow under “Visvesvaraya PhD Scheme”, Deit Y, Government of India. Pritha Banerjee would like to thankfully acknowledge the financial support obtained from UGC vide File No. 43-293/2014 (SR) dated 29.12.2015.

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Copyright information

© ASM International 2018

Authors and Affiliations

  1. 1.Department of Electronics and Telecommunication EngineeringJadavpur UniversityKolkataIndia

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