Abstract
We investigated silicon carbide (SiC) epitaxial layers grown by liquid phase epitaxy (LPE). The layers were grown on 6H-SiC and 4H-SiC well-oriented (0001) 35 mm diameter commercial wafers as well as on 6H-SiC Lely crystals. A few experiments were also done on off-axis 6H-SiC and 4H-SiC substrates. Layer thickness and growth rate ranged from 0.5 to 50 microns and 0.5 to 10 µm/h, respectively. Layers were investigated by x-ray diffraction, x-ray topography, and selective chemical etching in molten KOH. It was found that dislocation and micropipe density in LPE grown epitaxial layers were significantly reduced compared with the defect densities in the substrates.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
J.A. Powell, P.G. Neudeck, D.J. Larkin, J.W. Yang and P. Pironz, Inst. Phys. Conf. Ser. 137, eds. M.G. Spencer, R.P. Devaty, J.A. Edmond, M.A. Khan, R. Kaplan and M. Rahman (Bristol: IOP Publishing Ltd., 1994), p. 161.
P.G. Neudeck and J.A. Powell, IEEE Electron Dev. Lett. 15, 63 (1994).
R. Yakimova, M. Tuominen, A.S. Bakin, J.-O. Fornall, A. Vehanen and E. Janzen, Inst. Phys. Conf. Ser. 142 (Bristol: IOP Publishing Ltd., 1996), p. 101.
S.V. Rendakova, I.P. Nikitina, A.S. Zubrilov, A.V. Lee-Fatou, A.V. Shchukarev and M.V. Zamoryanskaya, Inst. Phys. Conf. Ser. 137, eds. M.G. Spencer, R.P. Devaty, J.A. Edmond, M. Asif Khan, R. Kaplan and M. Rahman (Bristol: IOP Publishing Ltd., 1994), p. 309.
T. Uemoto, Jpn. J. Appl. Phys. 34, L7 (1995).
A.E. Nikolaev, I.P. Nikitina and V.A. Dmitriev, Inst. Phys. Conf. Ser. 142 (Bristol: IOP Publishing Ltd., 1996), p. 125.
S. Rendakova, V. Ivantsov and V. Dmitriev, Abs. Intl. Conf. on Silicon Carbide, III-nitrides and Related Materials 1997, Stockholm, August 31–September 5, 1997, p. 237.
S.V. Rendakova, V.A. Ivantsov, I.P. Nikitina, A.S. Tregubova and V.A. Dmitriev, Workshop on Wide band semiconductors: Defects and Fundamental Properties, NC, January 1997, p. Ab-23.
V.E. Chelnokov, A.L. Syrkin, V.A. Dmitriev, Diamond and Related Mater. 6, 1480 (1997).
V. Dmitriev, presented at the 8th Brazilian Workshop on Semiconductor Physics, Aguas de Lindoia, February 1997.
V.A. Dmitriev, P.A. Ivanov, V.L. Levin, I.V. Popov, A.M. Strel’chak, Yu.M. Tairov, V.F. Tsvetkov and V.E. Chelnokov, Sov. Tech. Phys. Lett. 13, 489 (1987).
V.A. Dmitriev, Phys. B 185, 440 (1993).
V.A. Dmitriev, Properties of Silicon Carbide, ed. G.L. Harris, EMIS data reviews series N13 (London: INSPEC, IEE, 1995), p. 214.
A.E. Nikolaev, V.A. Ivantsov, S.V. Rendakova, M.N. Blashenkov and V.A. Dmitriev, J. Cryst. Growth 166, 607 (1996).
S.V. Blagenina, V.A. Dmitriev, N.G. Ivanova, I.V. Popov and G.N. Semenova, Technology of High-Power Semiconductor Devices (Valgus, Tallinn, 1982), p. 182 (in Russian).
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Rendakova, S.V., Nikitina, I.P., Tregubova, A.S. et al. Micropipe and dislocation density reduction in 6H-SiC and 4H-SiC structures grown by liquid phase epitaxy. J. Electron. Mater. 27, 292–295 (1998). https://doi.org/10.1007/s11664-998-0402-y
Received:
Accepted:
Issue Date:
DOI: https://doi.org/10.1007/s11664-998-0402-y