Abstract
A dopant-selective photoelectrochemical wet etching process for GaN is described. The process utilizes KOH solution and Hg arc lamp illumination to achieve selective etching of n-type GaN with respect to intrinsic and p-type GaN. An intrinsic GaN etch-stop layer as well as the selective undercutting of a buried n-type layer within a p-n GaN homostructure are demonstrated.
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Youtsey, C., Bulman, G. & Adesida, I. Dopant-selective photoenhanced wet etching of GaN. J. Electron. Mater. 27, 282–287 (1998). https://doi.org/10.1007/s11664-998-0400-0
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DOI: https://doi.org/10.1007/s11664-998-0400-0