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Acceptor and donor doping of AlxGa1−xN thin film alloys grown on 6H-SiC(0001) substrates via metalorganic vapor phase epitaxy

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Abstract

Thin films of Si-doped AlxGa1−xN (0.03≤x≤0.58) having smooth surfaces and strong near-band edge cathodoluminescence were deposited at 0.35–0.5 µm/h on on-axis 6H-SiC(0001) substrates at 1100°C using a 0.1 µm AlN buffer layer for electrical isolation. Alloy films having the compositions of Al0.08Ga0.92N and Al0.48Ga0.52N exhibited mobilities of 110 and 14 cm2/V·s at carrier concentrations of 9.6×1018 and 5.0×1017 cm−3, respectively. This marked change was due primarily to charge scattering as a result of the increasing Al concentration in these random alloys. Comparably doped GaN films grown under similar conditions had mobilities between 170 and ∼350 cm2/V·s. Acceptor doping of AlxGa1−xN for x≤0.13 was achieved for films deposited at 1100°C. No correlation between the O concentration and p-type electrical behavior was observed.

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References

  1. S. Strite and H. Morkoç, J. Vac. Sci. Technol. B 10, 1237 (1992).

    Article  CAS  Google Scholar 

  2. V.A. Dmitriev, K. Irvine, C.H. Carter, Jr., A.S. Zubrilov and D.V. Tsvetkov, Appl. Phys. Lett. 67, 115 (1995).

    Article  CAS  Google Scholar 

  3. B.W. Lim, Q.C. Chen, J.Y. Yang and M.A. Khan, Appl. Phys. Lett. 68, 3761 (1996).

    Article  CAS  Google Scholar 

  4. M.A. Khan, Q. Chen, C.J. Sun, J.W. Yang and M.S. Shur, Mater. Res. Soc. Proc. 395, (Pittsburgh, PA: Mater. Res. Soc., 1996), p. 913.

    Google Scholar 

  5. S.C. Binari, Electrochem. Soc. Proc. 95–21, (Electrochemical Soc., 1995), p. 136.

    Google Scholar 

  6. C.R. Abernathy, presented at 189th Mtg. of the Electrochemical Society, Los Angeles, CA, (1996) (tobe published).

  7. Morton International, Product Guide and Literature Review, 1992.

  8. P. McGraw, EpiChem, Inc. (Private Communication), 1996.

  9. T.W. Weeks, Jr., M.D. Bremser, K.S. Ailey, E.P. Carlson, W.G. Perry and R.F. Davis, Appl. Phys. Lett. 67, 401 (1995).

    Article  CAS  Google Scholar 

  10. T.W. Weeks, Jr., M.D. Bremser, K.S. Ailey, E.P. Carlson, W.G. Perry and R.F. Davis, J. Mater. Res. 11, 1011 (1996).

    Article  CAS  Google Scholar 

  11. M.D. Bremser, W.G. Perry, N.V. Edwards, T. Zheleva, N. Parikh, D.E. Aspnes and R.F. Davis, Mater. Res. Soc. Proc. 395, (Pittsburgh, PA: Mater. Res. Soc., 1996), p. 195.

    Google Scholar 

  12. D.P. Griffis, R. Loesing, D.A. Ricks, M.D. Bremser and R.F. Davis, SIMS XI Proc. (1997) (to be published).

  13. M.D. Bremser, W.G. Perry, K.S. Ailey, N.V. Edwards, O.H. Nam, D.E. Aspnes and R.F. Davis, MRS Internet J. Nitride Semicond. Res. 1, 8 (1996).

    Google Scholar 

  14. J. Bernholc, Mater. Res. Soc. Proc. 423, (Pittsburgh, PA: Mater. Res. Soc., 1996), p. 465.

    Google Scholar 

  15. D.V. Lang, R.A. Logan and M. Jaros, Phys. Rev. B 19, 1015 (1979).

    Article  CAS  Google Scholar 

  16. J. Neugebauer and C.G. Van de Walle, Phys. Rev. B 50, 8067 (1994).

    Article  CAS  Google Scholar 

  17. J.C. Zolper, R.G. Wilson, S.J. Pearton and R.A. Stall, Appl. Phys. Lett. 68, 1945 (1996).

    Article  CAS  Google Scholar 

  18. C. Wetzel, T. Suski, J.W. Ager III, E.R. Weber, E.E. Haller, S. Fischer, B.K. Meyer, R.J. Molnar and P. Perlin, Phys. Rev. Lett. 78, 3923 (1997).

    Article  CAS  Google Scholar 

  19. D.K. Schroder, Semiconductor Material and Device Characterization, (New York: John Wiley & Sons, Inc., 1990), p. 41.

    Google Scholar 

  20. H. Amano, M. Kitoh, K. Hiramatsu and I. Akasaki, J. Electrochem. Soc. 137, 1639 (1990).

    Article  CAS  Google Scholar 

  21. W. Götz, N.M. Johnson, J. Walker, D.P. Bour, H. Amano and I. Akasaki, Appl. Phys. Lett. 68, 1829 (1996).

    Article  Google Scholar 

  22. T. Tanaka, A. Watanabe, H. Amano, Y. Kobayashi, I. Akasaki, S. Yamazaki and M. Koide, Appl. Phys. Lett. 65, 593 (1994).

    Article  CAS  Google Scholar 

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Authors and Affiliations

  1. Department of Materials Science and Engineering, North Carolina State University, Box 7907, 27695-7907, Raleigh, NC

    M. D. Bremser, W. G. Perry & O. H. Nam

  2. Analytical Instrumentation Facility, North Carolina State University, Box 7531, 27695-7531, Raleigh, NC

    D. P. Griffis, R. Loesing & D. A. Ricks

Authors
  1. M. D. Bremser
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  2. W. G. Perry
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  3. O. H. Nam
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  4. D. P. Griffis
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  5. R. Loesing
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  6. D. A. Ricks
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  7. R. F. Davis
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Bremser, M.D., Perry, W.G., Nam, O.H. et al. Acceptor and donor doping of AlxGa1−xN thin film alloys grown on 6H-SiC(0001) substrates via metalorganic vapor phase epitaxy. J. Electron. Mater. 27, 229–232 (1998). https://doi.org/10.1007/s11664-998-0392-9

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  • DOI: https://doi.org/10.1007/s11664-998-0392-9

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