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Transport coefficients of AlGaN/GaN heterostructures

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Abstract

We have experimentally determined the effective mass (m*) of GaN, the classical (τ c), and quantum (τ q) scattering times for a two-dimensional electron gas residing at the interface of an AlGaN/GaN heterostructure, using the Shubnikovde Haas effect. The ratio of the two scattering times, τ c/τ q, suggests that, at low temperatures, the scattering mechanism limiting the mobility is due to remote ionized impurities located in AlGaN. This study should provide sample growers with information useful for improving the quality of the nitride heterostuctures.

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Authors and Affiliations

  1. Wright Laboratory, WL/MLPO, W-PAFB, 45433, OH

    M. Ahoujja & W. C. Mitchel

  2. Department of Physics, University of Dayton, 45469, Dayton, OH

    S. Elhamri

  3. Department of Physics, University of Cincinnati, 45221-0011, Cincinnati, OH

    R. S. Newrock & D. B. Mast

  4. Advanced Technology Materials, Inc., 7 Commerce Dr., 06810, Danbury, CT

    J. M. Redwing, M. A. Tischler & J. S. Flynn

Authors
  1. M. Ahoujja
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  2. W. C. Mitchel
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  4. R. S. Newrock
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  5. D. B. Mast
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  6. J. M. Redwing
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  7. M. A. Tischler
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  8. J. S. Flynn
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Ahoujja, M., Mitchel, W.C., Elhamri, S. et al. Transport coefficients of AlGaN/GaN heterostructures. J. Electron. Mater. 27, 210–214 (1998). https://doi.org/10.1007/s11664-998-0389-4

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  • DOI: https://doi.org/10.1007/s11664-998-0389-4

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