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In-situ reflectance monitoring during MOCVD of AlGaN

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Abstract

We report in-situ optical reflectance monitoring during the metalorganic chemical vapor deposition (MOCVD) growth of (Al)GaN. In addition to the well-known thin film interference effect which enables a real-time determination of growth rate, we show that several insights about the MOCVD growth process can be gained by using this simple yet powerful technique. Illustrations from a variety of applications for in-situ reflectance monitoring, specifically the study of growth evolution, the control of alloy fractions, and the use of growth rate to gauge surface kinetics and gas injection will be reported.

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References

  1. H. Amano, N. Sawaki, I. Akasaki and Y. Toyoda, Appl. Phys. Lett. 48, 353 (1986).

    Article  CAS  Google Scholar 

  2. S. Nakamura, Jpn. J. Appl. Phys. 30, L1705 (1991).

    Google Scholar 

  3. A. van der Drift, Philips Res. Repts. 22, 267 (1967).

    Google Scholar 

  4. B. Heying, X.H. Wu, S. Keller, Y. Li, D. Kapolnek, B.P. Keller, S.P. DenBaars and J.S. Speck, Appl. Phys. Lett. 68, 643 (1996); and S. Keller, B.P. Keller, Y.-F. Wu, B. Heying, D. Kapolnek, J.S. Speck, U.K. Mishra and S.P. DenBaars, Appl. Phys. Lett. 68, 1525 (1996).

    Article  CAS  Google Scholar 

  5. X.H. Wu, D. Kapolnek, E.J. Tarsa, B. Heying, S. Keller, B.P. Keller, U.K. Mishra, S.P. DenBaars, and J.S. Speck, Appl. Phys. Lett. 68, 1371 (1996).

    Article  CAS  Google Scholar 

  6. X.H. Wu, P. Fini, S. Keller, E.J. Tarsa, B. Heying, S. Keller, U.K. Mishra, S.P. DenBaars and J.S. Speck, Jpn. J. Appl. Phys. 35, L1648 (1996).

    Google Scholar 

  7. S. Nakamura, Jpn. J. Appl. Phys. 30, 1348 (1991); S. Nakamura, Jpn. J. Appl. Phys. 30, 1620 (1991); and S. Nakamura, T. Mukai and M. Senoh, J. Appl. Phys. 71, 5543 (1992).

    Article  CAS  Google Scholar 

  8. H. Amano, I. Akasaki, K. Hiramatsu, N. Koide and N. Sawaki, Thin Solid Films 163, 415 (1988).

    Article  CAS  Google Scholar 

  9. A.J. SpringThorpe and A. Majeed, J. Vac. Sci. Technol. B 8, 266 (1990); S.L. Wright, T.N. Jackson and R.F. Marks, J. Vac. Sci. Technol. B 8, 288 (1990).

    Article  Google Scholar 

  10. W.G. Breiland and G.H. Evans, J. Electrochem. Soc. 138, 1806 (1991).

    Article  Google Scholar 

  11. W.G. Breiland and K.P. Killeen, J. Appl. Phys. 78, 6726 (1995).

    Article  CAS  Google Scholar 

  12. H.E. Bennett and J.O. Porteus, J. Opt. Soc. Am. 51, 123 (1961).

    Article  CAS  Google Scholar 

  13. F.G. Celii, E.A. Beam, III. L.A. Files-Sesler, H.-Y. Liu and Y.C. Kao, Appl. Phys. Lett. 62, 2705 (1993).

    Article  CAS  Google Scholar 

  14. C. Pickering, Thin Solid Films 206, 275 (1991).

    Article  CAS  Google Scholar 

  15. S.N. Mohammad, A.A. Salvador and H. Morkoç, Proc. IEEE 83, (New York: IEEE, 1995), p. 1306.

    Google Scholar 

  16. R.F. Karlicek, private communication.

  17. L.B. Rowland, K. Doverspike, D.K. Gaskill and J.A. Freitas, Jr., Mater. Res. Soc. Symp. Proc. 339, 477 (1994).

    CAS  Google Scholar 

  18. J.N. Kuznia, M.A. Khan, D.T. Olson, R. Kaplan and J. Freitas, Appl. Phys. Lett. 73, 4700 (1993).

    CAS  Google Scholar 

  19. S. Keller, D. Kapolnek, B.P. Keller, Y. Wu, B. Heying, J.S. Speck, U.K. Mishra and S.P. DenBaars, Jpn. J. Appl. Phys. 35, L285 (1996).

    Google Scholar 

  20. A.E. Wickenden, D.K. Wickenden and T.J. Kistenmacher, J. Appl. Phys. 75, 5367 (1994).

    Article  CAS  Google Scholar 

  21. T. George, W.T. Pike, M.A. Khan, J.N. Kuznia and P. Chang-Chien, J. Electron. Mater. 24, 241 (1995).

    Article  CAS  Google Scholar 

  22. X.H. Wu, D. Kapolnek, E.J. Tarsa, B. Heying, S. Keller, B.P. Keller, U.K. Mishra, S.P. DenBaars and J.S. Speck, Appl. Phys. Lett. 68, 1371 (1996).

    Article  CAS  Google Scholar 

  23. J. Han, T.-B. Ng, R.M. Biefeld, M.H. Crawford and D.M. Follstaedt, submitted to Appl. Phys. Lett.

  24. Y. Morimoto, J. Electrochem. Soc. 121, 1383 (1974).

    CAS  Google Scholar 

  25. C. Wild, P. Koidl, W. Muller-Sebert, H. Walcher, R. Kohl, N. Herres, R. Locher, R. Samlenski and R. Brenn, Diamond and Related Mater. 2, 158 (1993).

    Article  CAS  Google Scholar 

  26. B.S. Ault, J. Phys. Chem. 96, 7908 (1992).

    Article  CAS  Google Scholar 

  27. “Cleaner” interpretations can be made in an MBE environment, see for example, H. Riechert, R. Averbeck, A. Graber, M. Schienle, U. Strauss and H. Tews, Mater. Res. Soc. Symp. Proc. 449, (Pittsburgh, PA: Mater. Res. Soc., 1997), p. 149.

    Google Scholar 

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Authors and Affiliations

  1. Sandia National Laboratories, 87185-0601, Albuquerque, NM

    T. B. Ng, J. Han & R. M. Biefeld

  2. Star Medical Technologies, 1249 Quarry Lane, Suite 100, 94566, Pleasanton, CA

    M. V. Weckwerth

Authors
  1. T. B. Ng
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  2. J. Han
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  3. R. M. Biefeld
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  4. M. V. Weckwerth
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Ng, T.B., Han, J., Biefeld, R.M. et al. In-situ reflectance monitoring during MOCVD of AlGaN. J. Electron. Mater. 27, 190–195 (1998). https://doi.org/10.1007/s11664-998-0385-8

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  • DOI: https://doi.org/10.1007/s11664-998-0385-8

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