Abstract
Implant activation annealing of Si-implanted GaN is reported for temperatures from 1100 to 1400°C. Free electron concentrations up to 3.5×1020 cm−3 are estimated at the peak of the implanted profile with Hall mobilities of ∼60 cm2/Vs for annealing at 1300°C for 30 s with an AIN encapsulant layer. This mobility is comparable to epitaxial GaN doped at a similarly high level. For annealing at ≥1300°C, the sample must be encapsulated with AIN to prevent decomposition of the GaN layer. Channeling Rutherford backscattering demonstrates the partial removal of the implant damage after a 1400°C anneal with a minimum channeling yield of 12.6% compared to 38.6% for the as-implanted spectrum. Scanning electron microscope images show evidence of decomposition of unencapsulated GaN after a 1300°C anneal and complete sublimation after 1400°C. The use of AIN encapsulation and annealing at temperatures of ∼1300°C will allow the formation of selective areas of highly doped GaN to reduce the contact and access resistance in GaN-based transistors and thyristors.
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Zolper, J.C., Han, J., Biefeld, R.M. et al. Si-implantation activation annealing of GaN up to 1400°C. J. Electron. Mater. 27, 179–184 (1998). https://doi.org/10.1007/s11664-998-0383-x
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DOI: https://doi.org/10.1007/s11664-998-0383-x