Abstract
Dry etching of InGaP, AlInP, and AlGaP in inductively coupled plasmas (ICP) is reported as a function of plasma chemistry (BCl3 or Cl2, with additives of Ar, N2, or H2), source power, radio frequency chuck power, and pressure. Smooth anisotropic pattern transfer at peak etch rates of 1000–2000Å·min−1 is obtained at low DC self-biases (−100V dc) and pressures (2 mTorr). The etch mechanism is characterized by a trade-off between supplying sufficient active chloride species to the surface to produce a strong chemical enhancement of the etch rate, and the efficient removal of the chlorinated etch products before a thick selvedge layer is formed. Cl2 produces smooth surfaces over a wider range of conditions than does BCl3.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
M. Ishikawa, Electron. Lett. 26, 211 (1990).
K. Kobayashi, Jpn. J. Appl. Phys. 29, L1669 (1990).
J.M. Kuo, Thin Solid Films 231, 158 (1993).
A. Vawter, Tech. Dig. Conf. Lasers and Electro-optics, Baltimore, (Washington, D.C.: Optical Society of America, 1990.
J.M. Kuo and Y.J. Chen, J. Vac. Sci. Technol. B 11, 976 (1993).
W. Netschen, K.H. Bachem and T. Lauterbach, Mater. Res. Soc. Symp. Proc. 240, (Pittsburgh, PA: Mater. Res. Soc., 1992), p. 493.
C.R. Abernathy, F. Ren, P. Wisk, S.J. Pearton and R. Esagui, Appl. Phys. Lett. 61, 1092 (1992).
W.S. Hobson, F. Ren, J.R. Lothian and S.J. Pearton, Semicond. Sci. Technol. 7, 598 (1992).
D.P. Bour, Quantum Well Lasers, ed. P.S. Zory (Boston: Academic Press, 1993) p. 415.
A.W. Hanson, S.A. Stockman and G.E. Stillman, IEEE Electron. Res. Lett. 14, 25 (1993).
R.J. Shul, R.P. Schneider and C. Constantine, Electron. Lett. 30, 817 (1994).
J. Hong, J.W. Lee, C.J. Santana, C.R. Abernathy, S.J. Pearton, W.S. Hobson and F. Ren, Mater. Sci. Eng. B 41, 247 (1998).
J. Hong, J.W. Lee, C.J. Santana, C.R. Abernathy, E.S. Lambers, S.J. Pearton, W.S. Hobson and F. Ren, Solid State Electron. 39, 1109 (1998); J. Electron. Mater. 25, 1428 (1998).
C.R. Abernathy, J. Vac. Sci. Technol. A 11, 883 (1993).
W.S. Hobson, Mater. Res. Soc. Symp. Proc. 300, (Pittsburgh, PA: Mater. Res. Soc., 1993), p. 75.
R.J. Shul, G.B. McClellan, R.D. Briggs, D.J. Rieger, S.J. Pearton, C.R. Abernathy, J.W. Lee, C. Constantine and C. Barratt, J. Vac. Sci. Technol. A 15, 673 (1997).
J.W. Lee, J. Hong and S.J. Pearton, Appl. Phys. Lett. 68, 847 (1998).
F. Ren, J.R. Lothian, J.M. Kuo, W.S. Hobson, J. Lopata, J.A. Caballero, S.J. Pearton and M.W. Cole, J. Vac. Sci. Technol. B 14, 1203 (1995).
F. Ren, W.S. Hobson, J.R. Lothian, J. Lopata, J.A. Caballero, S.J. Pearton and M.W. Cole, Appl. Phys. Lett. 67, 2497 (1995).
S. Thomas, III, K.K. Ko and S.W. Pang, J. Vac. Sci. Technol. A 13, 894 (1995).
T.R. Hayes, InP and Related Materials, ed. A. Katz (Boston, MA: Artech House, 1990), Ch. 8.
M. Vernon, T.R. Hayes and V.M. Donnelly, J. Vac. Sci. Technol. A 10, 3499 (1992).
G.A. Vawter and C.I.H. Ashby, J. Vac. Sci. Technol. 12, 3374 (1994).
D.G. Lishan and E.L. Hu, Appl. Phys. Lett. 56, 1667 (1990).
S. Dzioba, S. Jatar, T.V. Herak, J.P.D. Cook, J. Marks, T. Jones and F.R. Shepherd, Appl. Phys Lett. 62, 2486 (1993).
CRC Handbook (Boca Raton, FL: CRC Press, 1990).
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Hong, J., Lambers, E.S., Abernathy, C.R. et al. Inductively coupled plasma etching of InGaP, AllnP, and AlGaP in Cl2 and BCl3 chemistries. J. Electron. Mater. 27, 132–137 (1998). https://doi.org/10.1007/s11664-998-0203-3
Received:
Accepted:
Issue Date:
DOI: https://doi.org/10.1007/s11664-998-0203-3