Abstract
Low-resistance ohmic conduction across an epitaxially lifted-off (ELO) thin n-GaAs film and a Si substrate was obtained by attaching the ELO film on the Si substrate coated with a Pd/Ge/Pd multilayer. Good bonding and ohmic contacts to both GaAs and Si were achieved at the same time after annealing. The interface compound formation was studied by secondary ion mass spectroscopy and x-ray diffraction analyses. The ELO technology was used to fabricate an ELO stripe geometry diode laser on Si with the back-side contact on Si substrate. Good laser performance with comparable characteristics as conventional laser diodes on GaAs substrates was obtained.
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Fan, J.C., Tsai, C.M., Chen, K.Y. et al. Low-resistance vertical conduction across epitaxially lifted-off n-GaAs film and Pd/Ge/Pd coated Si substrate. J. Electron. Mater. 27, 110–113 (1998). https://doi.org/10.1007/s11664-998-0199-8
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DOI: https://doi.org/10.1007/s11664-998-0199-8