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Analytical Modelling and Simulation of a Junctionless Accumulation-Mode Tube (JLAMT) Field-Effect Transistor (FET) for Radiation Sensing Dosimeter Applications

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Abstract

In this paper, an analytical model for a junctionless accumulation-mode-based nanotube field-effect transistor (JLAM-NT-FET) is proposed for radiation sensing dosimeter applications. The drift in electrical parameters including potential, threshold voltage (Vth), drain current (I), and subthreshold slope (SS) for different values of interface trap charge is studied in depth. The numerical findings accord well with the those of the simulation, and the numerical/analytical results are also validated at different channel lengths. The sensitivity of the proposed design is compared with the conventional junctionless FET for dosimeter applications by analysing the differences in Ids, ION/IOFF ratio, gm, SS, Vth and sensitivity. The results indicate that the JLAM-FET demonstrates better radiation sensing than the conventional junctionless FET.

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Authors and Affiliations

  1. Delhi Public School, Vasant Kunj, Delhi, India

    Sia Batra

  2. Department of Electronics and Communication Engineering, Delhi Technological University, Delhi, India

    Sonam Rewari

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  1. Sia Batra
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  2. Sonam Rewari
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Correspondence to Sonam Rewari.

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Appendix 1

Appendix 1

$$ M_{{\text{n}}} = \frac{{L_{{2{\text{n}}}} - L_{{1{\text{n}}}} \exp \left( { - \eta_{{\text{n}}} L} \right)}}{{2\sinh \left( {\eta_{{\text{n}}} L} \right)}} $$
(A1)
$$ N_{{\text{n}}} = \frac{{L_{{1{\text{n}}}} \exp \left( {\eta_{{\text{n}}} L} \right) - L_{{2{\text{n}}}} }}{{2\sinh \left( {\eta_{{\text{n}}} L} \right)}} $$
(A2)
$$ L_{{1{\text{n}}}} = \frac{2}{{t^{2} J_{1}^{2} \left( {\eta_{{\text{n}}} t_{{{\text{eff}}}} } \right)}}\left[ {\left( {V_{{{\text{bi}}}} - V_{{{\text{gseff}}}} + \frac{{t_{{{\text{si}}}} }}{2}} \right)\frac{{t_{{{\text{eff}}}} J_{1} \left( {\eta_{{\text{n}}} t_{{{\text{eff}}}} } \right)}}{{\eta_{{\text{n}}} }} + \frac{{\wp t_{{{\text{eff}}}} }}{{\eta_{{\text{n}}}^{2} }}\left\{ {t_{{{\text{eff}}}} J_{2} \left( {\eta_{{\text{n}}} t_{{{\text{eff}}}} } \right) - \left( {t_{{{\text{eff}}}} - \frac{{t_{{{\text{eff}}}} }}{2}} \right)\left( {\frac{{J_{1} \left( {\eta_{{\text{n}}} t_{{{\text{eff}}}} } \right)}}{{\eta_{{\text{n}}} t_{{{\text{eff}}}} - 1}} - J_{0} \left( {\eta_{{\text{n}}} t_{{{\text{eff}}}} } \right)} \right)} \right\}} \right] $$
(A3)
$$ L_{{2{\text{n}}}} = \frac{2}{{t^{2} J_{1}^{2} \left( {\eta_{{\text{n}}} t_{{{\text{eff}}}} } \right)}}\left[ {\left( {V_{{{\text{bi}}}} + V_{{{\text{ds}}}} - V_{{{\text{gseff}}}} + \frac{{t_{{{\text{si}}}} }}{2}} \right)\frac{{t_{{{\text{eff}}}} J_{1} \left( {\eta_{{\text{n}}} t_{{{\text{eff}}}} } \right)}}{{\eta_{{\text{n}}} }} + \frac{{\wp t_{{{\text{eff}}}} }}{{\eta_{{\text{n}}}^{2} }}\left\{ {t_{{{\text{eff}}}} J_{2} \left( {\eta_{{\text{n}}} t_{{{\text{eff}}}} } \right) - \left( {t_{{{\text{eff}}}} - \frac{{t_{{{\text{eff}}}} }}{2}} \right)\left( {\frac{{J_{1} \left( {\eta_{{\text{n}}} t_{{{\text{eff}}}} } \right)}}{{\eta_{{\text{n}}} t_{{{\text{eff}}}} - 1}} - J_{0} \left( {\eta_{{\text{n}}} t_{{{\text{eff}}}} } \right)} \right)} \right\}} \right] $$
(A4)

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Batra, S., Rewari, S. Analytical Modelling and Simulation of a Junctionless Accumulation-Mode Tube (JLAMT) Field-Effect Transistor (FET) for Radiation Sensing Dosimeter Applications. J. Electron. Mater. 52, 3604–3612 (2023). https://doi.org/10.1007/s11664-023-10240-0

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