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Influence of Dry and Wet Etching on AlInSb Contact Resistivity, Transfer Length, and Sheet Resistance Using Circular Transmission Model

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Abstract

The ohmic contact property is a major concern in semiconductors, and in particular InSb 2DEG devices, that is essentially related to the surface structure. One of the most difficult aspects of surface bonds of InSb is preventing the formation of a native oxide on the InSb surface, in particular the surface based around the cap layer (AlInSb) towards achieving the desired Ohmic contact. The aim of this study is to investigate the electrical contact properties of pristine and treated AlInSb wafers using wet and dry etching. This investigation focuses on modification of the metal–semiconductor contact for InSb 2DEG in order to enhance the performance of future electronic devices. Therefore, wet and dry etching techniques present an approach of modifying the AlInSb surface prior to the metal deposition process without any oxide. This study has produced interesting results that show significant decreases of contact resistivity and sheet resistance, while the transfer length increases with etching depth due to leakage current in the cap layer.

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Data Availability

The datasets generated during and/or analyzed during the current study are available from the corresponding author on reasonable request.

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  1. Department of Physics, College of Science, University of Baghdad, Baghdad, Iraq

    Shawkat Ismael Jubair

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  1. Shawkat Ismael Jubair
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Jubair, S.I. Influence of Dry and Wet Etching on AlInSb Contact Resistivity, Transfer Length, and Sheet Resistance Using Circular Transmission Model. J. Electron. Mater. 52, 2718–2721 (2023). https://doi.org/10.1007/s11664-023-10234-y

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