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Recent Advances to Enhance Electrical and Photoelectrical Properties of Antimony Selenide Crystals via Tin Doping

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Abstract

Tin-doped antimony selenide ((Sn\(_x\)Sb\(_{1-x}\))\(_2\)Se\(_3\)) crystals were grown by direct vapour transport to overcome the challenges posed by the high intrinsic electrical resistivity of Sb\(_2\)Se\(_3\). Energy dispersive analysis of x-ray and scanning electron microscopy were performed to determine elemental chemical composition and morphology of the grown crystals. The powder x-ray diffraction spectra revealed that the (Sn\(_x\)Sb\(_{1-x}\))\(_2\)Se\(_3\) crystals possess an orthorhombic crystal lattice structure. Furthermore, all microstructural parameters were evaluated. The Raman spectra of the grown crystals revealed the structure of Sb\(_2\)Se\(_3\) to be unaltered during Sn doping. The value of the optical band gap of (Sn\(_x\)Sb\(_{1-x}\))\(_2\)Se\(_3\) crystals decreased from 1.20 eV to 0.97 eV as the doping concentration of Sn increased from x = 0.00, 0.10, 0.15, 0.20. Moreover, the decomposition kinetic parameters were evaluated using several kinetic models. The electrical, trap-depth and photoresponse parameters were studied in different samples with variations of temperature and illumination intensity. The exceptional performance of the (Sn\(_x\)Sb\(_{1-x}\))\(_2\)Se\(_3\) crystals suggests that they hold promising potential for applications in highly efficient photoelectric and solar devices.

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Data Availability

The dataset used and analysed during the current study are available from the corresponding author on reasonable request.

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Acknowledgments

The authors acknowledge the support from Shri Pankajbhai Gijubhai Patel (President of KVNM) and the management of CB Patel Computer College and JNM Patel Science College.

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No funding was received to assist with the preparation of this manuscript.

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Author notes

  1. H. M. Patel, S. P. Sikligar, P. D. Patel, P. B. Patel, H. N. Desai, J. M. Dhimmar and B. P. Modi have contributed equally to this work.

Authors and Affiliations

  1. Department of Physics, Veer Narmad South Gujarat University, Surat, Gujarat, 395007, India

    H. M. Patel, S. P. Sikligar, P. D. Patel, J. M. Dhimmar & B. P. Modi

  2. C. B. Patel Computer College and J. N. M. Patel Science College, Bharthana, Surat, Gujarat, 395017, India

    H. M. Patel, P. B. Patel & H. N. Desai

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Patel, H.M., Sikligar, S.P., Patel, P.D. et al. Recent Advances to Enhance Electrical and Photoelectrical Properties of Antimony Selenide Crystals via Tin Doping. J. Electron. Mater. 52, 196–208 (2023). https://doi.org/10.1007/s11664-022-09963-3

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