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The Effect of Bias Stress on the Performance of Amorphous InAlZnO-Based Thin Film Transistors

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Abstract

In amorphous InAlZnO (a-IAZO), the addition of the third cation of Al further slows the crystallization kinetics of In2O3 and enhances amorphous phase stability, compared to the binary cation system of InZnO. In addition, substantially high carrier mobilities of a-IAZO are obtained, in its unannealed state: Hall mobility of 30–50 cm2/Vs at a high carrier density regime (>~1018/cm3) and thin film transistor (TFT) field effect mobility of ~8–15 cm2/Vs at a low carrier density regime (<~1016/cm3). Gate bias stress stability of IAZO TFTs is investigated with positive and negative gate biases over time. Because of the channel depletion of n-type IAZO when negative gate bias is applied, no performance instabilities were identified. However, with positive gate bias stress (PBS) conditions (30 V), the threshold voltage (VT) shifts towards higher voltages during the initial 100 s and then no significant changes in VT are observed during the remaining time, over 105 s of the dependent measurements. The TFT field effect mobility shows a similar trend: increases from 7.64 cm2/Vs to 11.74 cm2/Vs within the first 100 s and then is saturated. It is identified that the PBS-induced device parameter variations are attributed to an increase and saturation of trap density at the channel/dielectric interface.

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Acknowledgments

This work was partially supported by the U.S. National Science Foundation (NSF) Award No. ECCS-1931088. S.L. and H.W.S. acknowledge the support from the Improvement of Measurement Standards and Technology for Mechanical Metrology (Grant No. 21011042) by KRISS. K.N. was supported by the Basic Science Research Program (NRF-2021R11A1A01051246) through the NRF Korea funded by the Ministry of Education.

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Authors and Affiliations

  1. School of Engineering Technology, Purdue University, West Lafayette, IN, 47907, USA

    Mingyuan Liu, Fei Qin, Molly Rothschild, Yuxuan Zhang, Dong Hun Lee & Sunghwan Lee

  2. Department of Materials Science and Engineering, KAIST, Daejeon, 34141, Republic of Korea

    Kwangsoo No

  3. Center for Mass and Related Quantities, Korea Research Institute of Standard and Science, Daejeon, 34113, Republic of Korea

    Han Wook Song

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  1. Mingyuan Liu
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Correspondence to Han Wook Song or Sunghwan Lee.

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Liu, M., Qin, F., Rothschild, M. et al. The Effect of Bias Stress on the Performance of Amorphous InAlZnO-Based Thin Film Transistors. J. Electron. Mater. 51, 1813–1819 (2022). https://doi.org/10.1007/s11664-022-09453-6

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