Abstract
In this work, design optimization and performance analysis of GaN nanowire (NW) field effect transistors (FETs) for gate length (Lg) of 3 nm, 5 nm, and 7 nm is performed to evaluate their performance in electronics and biosensing applications. The simulation and modeling are carried out using self-consistent Poisson and Schrodinger equations based on a non-equilibrium Green function (NEGF) approach using Silvaco ATLAS. The simulation results reveal the following: (1) ~ 40.13% increase in the integration density and ~ 33.59% increase in the power density, (2) ~ 25.35% increase in Ion/Ioff ratio for nanowire channel thickness (Tnw) of 1.6 nm and ~ 38.78% increase in Ion/Ioff ratio for Tnw = 80 nm, (3) a way to change the mode of operation from E-mode to D-mode and vice-versa based on Tnw variations, and (4) switching speed gain of 0.78% for NW FETs with Tnw = 1.6 nm and 0.09% for NW FETs with Tnw = 80 nm for gate length scaling of 7 nm to 5 nm and a loss of ~ 0.46% and ~ 0.09% for 7 nm to 3 nm. The device has been designed and optimized for digital applications with an Ion/Ioff ratio of ~ 108 and sensitivity of ~ 21.8 mS for a biosensing application.
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References
J.-P. Colinge and J. C. Greer, Nanowire Transistors, Cambridge University Press, (2016).
J. P. Colinge and S. H. Dhong, Prospective for Nanowire Transistors, in Proceedings of the Custom Integrated Circuits Conference (2013).
I. Ferain, C. A. Colinge, and J. P. Colinge, Nature 479, (2011).
M. Karbalaei, D. Dideban, and H. Heidari, Results Phys. 16, (2020).
L. Ansari, B. Feldman, G. Fagas, J. P. Colinge, and J. C. Greer, Appl. Phys. Lett. 97, (2010).
H. Nam, Y. Lee, J. Park, and C. Shin, IEEE Transactions on Electron Devices 63, (2016).
N. Chowdhury, G. Iannaccone, G. Fiori, D.A. Antoniadis, and T. Palacios, IEEE Electron Device Lett. 38, 859 (2017).
Y. Chu, S.C. Lu, N. Chowdhury, M. Povolotskyi, G. Klimeck, M. Mohamed, and T. Palacios, IEEE Electron Device Lett. 40, 874 (2019).
S. Vodapally, Y.I. Jang, I.M. Kang, I.T. Cho, J.H. Lee, Y. Bae, G. Ghibaudo, S. Cristoloveanu, K.S. Im, and J.H. Lee, IEEE Electron. Device Lett. 38, 252 (2017).
D. Nagy, G. Indalecio, A.J. Garcia-Loureiro, M.A. Elmessary, K. Kalna, and N. Seoane, IEEE J. Electron. Devices Soc. 6, 332 (2018).
M.I. Khan, I.K.M.R. Rahman, and Q.D.M. Khosru, IEEE Trans. Electron. Devices 67, 3568 (2020).
R.R. Thakur, and P. Singh, J. Nanoelectron. Optoelectron. 14, 92 (2019).
F.M. Bufler, R. Ritzenthaler, H. Mertens, G. Eneman, A. Mocuta, and N. Horiguchi, IEEE Electron. Device Lett. 39, 1628 (2018).
B. Hoefflinger, ITRS: The International Technology Roadmap for Semiconductors, (2011).
M.F. Fatahilah, K. Strempel, F. Yu, S. Vodapally, A. Waag, and H.S. Wasisto, Micro Nano Eng. 3, 59 (2019).
R.R. Thakur, and P. Singh, Microelectron. Reliab. 96, 21 (2019).
D.J. Frank, R.H. Dennard, E. Nowak, P.M. Solomon, Y. Taur, and H.S.P. Wong, Proc. IEEE 89, 259 (2001).
Y. Taur, IBM J. Res. Dev. 46, 213 (2002).
P.M. Zeitzoff, and H.R. Huff, AIP Conf. Proc. 788, 203 (2005).
N. Chowdhury, Q. Xie, M. Yuan, N. S. Rajput, P. Xiang, K. Cheng, H. W. Then, and T. Palacios, First Demonstration of a Self-Aligned GaN p-FET, in Technical Digest - International Electron Devices Meeting, IEDM (2019).
M. Ruzzarin, C. De Santi, F. Yu, M.F. Fatahilah, K. Strempel, H.S. Wasisto, A. Waag, G. Meneghesso, E. Zanoni, and M. Meneghini, Appl. Phys. Lett. 117, 203501 (2020).
C.P. Chen, A. Ganguly, C.Y. Lu, T.Y. Chen, C.C. Kuo, R.S. Chen, W.H. Tu, W.B. Fischer, K.H. Chen, and L.C. Chen, Anal. Chem. 83, 1938 (2011).
F. Patolsky, and C.M. Lieber, Mater. Today 8, 20 (2005).
Z. Wang, S. Lee, K. Koo, and K. Kim, IEEE Trans. Nanobiosci. 15, 186 (2016).
T. C. Nguyen, W. Qiu, M. Altissimo, P. G. Spizzirri, L. H. W. van Beveren, and E. Skafidas, Nanostructures Tech. Appl. 265 (2016).
F. Yang, and G.J. Zhang, Rev. Anal. Chem. 33, 95 (2014).
P. Ambhorkar, Z. Wang, H. Ko, S. Lee, K. I. Koo, K. Kim, and D. I. D. Cho, Micromachines, 9, (2018).
Li, W., Brubaker, M.D., Bryan, T. Spann, Bertness, K.A., and Patrick, F., IEEE Electron. Device Lett. 39, (2017).
Y. Cai, C. Zhiqun, Y. Zhenchuan, W. T. Chak, M. L. Kei, J. C. Kevin., IEEE Electron. Device Letters 28, (2007).
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Thakur, R.R., Chaturvedi, N. Scalability of GaN Nanowire FET beyond 5 nm: A Simulation Study. J. Electron. Mater. 50, 4128–4134 (2021). https://doi.org/10.1007/s11664-021-08943-3
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DOI: https://doi.org/10.1007/s11664-021-08943-3