Abstract
Heterojunctions made of n-type cadmium sulfide (CdS) and p-type zinc telluride (ZnTe) thin films with rectifying behavior have been developed using an in situ approach based on pulsed laser deposition (PLD). The structure of the CdS and ZnTe thin films was observed by x-ray diffraction (XRD) analysis. Optical and electrical characterization of the semiconductor films and fabricated diodes is also reported herein. For this purpose, a set of CdS/ZnTe diodes was fabricated with circular gold contacts of varying diameters from 100 µm to 300 µm. The carrier concentrations of the semiconductor layers were determined using a Hall-effect measurement system, yielding values of 5.26 × 1018 cm−3 and 3.5 × 1013 cm−3 for CdS and ZnTe, respectively. Current–voltage (I–V) characteristic curves were used to observe the typical rectifier behavior over three orders of magnification. In addition, other parameters were obtained from the I–V curves, such as the density current, saturation current, series resistance, threshold voltage, and ideality factor. Also, capacitance–voltage (C–V) characteristic curves allowed the determination of the following parameters: depletion width, built-in voltage, and donor concentration. According to the results, such n-type CdS/p-type ZnTe heterojunctions with rectifying behavior could find potential applications in the development of photodetectors by modifying the difference in carrier concentration between the two materials.
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B. Gao, Y. Zhao, L. Cai, P. Liu, Z. Liang, and H. Shen, B. Gao, Y. Zhao, L. Cai, P. Liu, Z. Liang, and H. Shen, Sol. Energy, 2018, 173, p 635.
M. Shkir, I.M. Ashraf, A. Khan, M.T. Khan, A.M. El-Toni, and S. AlFaify, M. Shkir, I.M. Ashraf, A. Khan, M.T. Khan, A.M. El-Toni, and S. AlFaify, Sens. Actuators A Phys., 2020, 306, p 111952.
L. Arun Raja, P. Thirumoorthy, A. Karthik, R. Subramanian, and V. Rajendran, L. Arun Raja, P. Thirumoorthy, A. Karthik, R. Subramanian, and V. Rajendran, J. Alloys Compd., 2017, 706, p 470.
J. Hiie, T. Dedova, V. Valdna, and K. Muska, J. Hiie, T. Dedova, V. Valdna, and K. Muska, Thin Solid Films, 2006, 511–512, p 443.
E. Alkuam, M. Mohammed, and T.-P. Chen, E. Alkuam, M. Mohammed, and T.-P. Chen, Sol. Energy, 2017, 157, p 342.
K. Ravichandran, N. Nisha Banu, V. Senthamil Selvi, B. Muralidharan, and T. Arun, K. Ravichandran, N. Nisha Banu, V. Senthamil Selvi, B. Muralidharan, and T. Arun, J. Alloys Compd, 2016, 687, p 402.
C.D. Nascimento, E. Granemann Souza, and C. Aguzzoli, C.D. Nascimento, E. Granemann Souza, and C. Aguzzoli, Thin Solid Films, 2018, 651, p 39.
K. Yoshino, A. Memon, M. Yoneta, K. Ohmori, H. Saito, and M. Ohishi, K. Yoshino, A. Memon, M. Yoneta, K. Ohmori, H. Saito, and M. Ohishi, Phys. Status Solidi, 2002, 229, p 977.
S.A. Maki, and H.K. Hassun, S.A. Maki, and H.K. Hassun, J. Phys. Conf. Ser., 2018, 1003, p 012085.
J. Li, D.R. Diercks, T.R. Ohno, C.W. Warren, M.C. Lonergan, J.D. Beach, and C.A. Wolden, J. Li, D.R. Diercks, T.R. Ohno, C.W. Warren, M.C. Lonergan, J.D. Beach, and C.A. Wolden, Sol. Energy Mater. Sol. Cells, 2015, 133, p 208.
H. Singh, T. Singh, and J. Sharma, H. Singh, T. Singh, and J. Sharma, ISSS J. Micro Smart Syst., 2018, 7, p 123.
T. Ota, K. Kobayashi, and K. Takahashi, T. Ota, K. Kobayashi, and K. Takahashi, J. Appl. Phys., 1974, 45, p 1750.
T. Ota, K. Kobayashi, and K. Takahashi, T. Ota, K. Kobayashi, and K. Takahashi, Solid State Electron., 1972, 15, p 1387.
F. Pfisterer, and H.W. Schock, F. Pfisterer, and H.W. Schock, J. Cryst. Growth, 1982, 59, p 432.
W. Wang, J.D. Phillips, S.J. Kim, and X. Pan, W. Wang, J.D. Phillips, S.J. Kim, and X. Pan, J. Electron. Mater., 2011, 40, p 1674.
G.K. Rao, K.V. Bangera, and G.K. Shivakumar, G.K. Rao, K.V. Bangera, and G.K. Shivakumar, Solid State Electron., 2010, 54, p 787.
G.K. Rao, K.V. Bangera, and G.K. Shivakumar, G.K. Rao, K.V. Bangera, and G.K. Shivakumar, Solid State Electron., 2011, 56, p 100.
E. Zielony, K. Olender, E. Płaczek-Popko, T. Wosiński, A. Racino, Z. Gumienny, G. Karczewski, and S. Chusnutdinow, E. Zielony, K. Olender, E. Płaczek-Popko, T. Wosiński, A. Racino, Z. Gumienny, G. Karczewski, and S. Chusnutdinow, J. Appl. Phys., 2014, 115, p 244501.
O.I. Olusola, H.I. Salim, and I.M. Dharmadasa, O.I. Olusola, H.I. Salim, and I.M. Dharmadasa, Mater. Res. Express, 2016, 3, p 095904.
O.I. Olusola, M.L. Madugu, N.A. Abdul-Manaf, and I.M. Dharmadasa, O.I. Olusola, M.L. Madugu, N.A. Abdul-Manaf, and I.M. Dharmadasa, Curr. Appl. Phys., 2016, 16, p 120.
K.S. Lee, G. Oh, and E.K. Kim, K.S. Lee, G. Oh, and E.K. Kim, J. Korean Phys. Soc., 2016, 69, p 416.
Y.K. Ezhovskii, and D.V. Pavlov, Y.K. Ezhovskii, and D.V. Pavlov, Inorg. Mater., 2007, 43, p 692.
E. Zielony, E. Płaczek-Popko, P. Nowakowski, Z. Gumienny, A. Suchocki, and G. Karczewski, E. Zielony, E. Płaczek-Popko, P. Nowakowski, Z. Gumienny, A. Suchocki, and G. Karczewski, Mater. Chem. Phys., 2012, 134, p 821.
J. Avila-Avendano, I. Mejia, H.N. Alshareef, Z. Guo, C. Young, and M. Quevedo-Lopez, J. Avila-Avendano, I. Mejia, H.N. Alshareef, Z. Guo, C. Young, and M. Quevedo-Lopez, Thin Solid Films, 2016, 608, p 1.
A.A. Al-mebir, P. Harrison, A. Kadhim, G. Zeng, and J. Wu, A.A. Al-mebir, P. Harrison, A. Kadhim, G. Zeng, and J. Wu, Adv. Condens. Matter Phys., 2016, 2016, p 1.
A. Kumar, A. Sanger, A. Kumar, and R. Chandra, A. Kumar, A. Sanger, A. Kumar, and R. Chandra, RSC Adv., 2016, 6, p 47178.
C. Nicolaou, A. Zacharia, A. Delimitis, G. Itskos, and J. Giapintzakis, C. Nicolaou, A. Zacharia, A. Delimitis, G. Itskos, and J. Giapintzakis, Appl. Surf. Sci., 2020, 511, p 145547.
F.J. Ochoa-Estrella, A. Vera-Marquina, I. Mejia, A.L. Leal-Cruz, M.I. Pintor-Monroy, and M. Quevedo-López, F.J. Ochoa-Estrella, A. Vera-Marquina, I. Mejia, A.L. Leal-Cruz, M.I. Pintor-Monroy, and M. Quevedo-López, J. Mater. Sci. Mater. Electron., 2018, 29, p 20623.
D.-J. Kim, J.-W. Kim, E.J. Kim, and K.-K. Koo, D.-J. Kim, J.-W. Kim, E.J. Kim, and K.-K. Koo, Korean J. Chem. Eng., 2011, 28, p 1120.
W. Mahmood, J. Ali, I. Zahid, A. Thomas, and A. ul Haq, W. Mahmood, J. Ali, I. Zahid, A. Thomas, and A. ul Haq, Optik (Stuttg), 2018, 158, p 1558.
M.G. Syed Basheer Ahamed, V.S. Nagarethinam, A. Thayumanavan, K.R. Murali, C. Sanjeeviraja, and M. Jayachandran, M.G. Syed Basheer Ahamed, V.S. Nagarethinam, A. Thayumanavan, K.R. Murali, C. Sanjeeviraja, and M. Jayachandran, J. Mater. Sci. Mater. Electron, 2010, 21, p 1229.
G.K. Reeves, G.K. Reeves, Solid State Electron., 1980, 23, p 487.
H. Uda, H. Matsumoto, K. Kuribayashi, Y. Komatsu, A. Nakano, and S. Ikegami, H. Uda, H. Matsumoto, K. Kuribayashi, Y. Komatsu, A. Nakano, and S. Ikegami, Jpn. J. Appl. Phys., 1983, 22, p 1832.
A.J. Scholten, G.D.J. Smit, M. Durand, R. Van Langevelde, and D.B.M. Klaassen, A.J. Scholten, G.D.J. Smit, M. Durand, R. Van Langevelde, and D.B.M. Klaassen, IEEE Trans. Electron Devices, 2006, 53, p 2098.
V. Kabra, L. Aamir, and M.M. Malik, V. Kabra, L. Aamir, and M.M. Malik, Beilstein J. Nanotechnol., 2014, 5, p 2216.
M. Soylu, A.A. Al-Ghamdi, O.A. Al-Hartomy, F. El-Tantawy, and F. Yakuphanoglu, M. Soylu, A.A. Al-Ghamdi, O.A. Al-Hartomy, F. El-Tantawy, and F. Yakuphanoglu, Phys. E Low-Dimens. Syst. Nanostruct., 2014, 64, p 240.
M. Soylu, A.A. Al-Ghamdi, and F. Yakuphanoglu, M. Soylu, A.A. Al-Ghamdi, and F. Yakuphanoglu, Microelectron. Eng., 2012, 99, p 50.
B. Ray, A.G. Baradwaj, B.W. Boudouris, and M.A. Alam, B. Ray, A.G. Baradwaj, B.W. Boudouris, and M.A. Alam, J. Phys. Chem. C, 2014, 118, p 17461.
I. Hussain, M.Y. Soomro, N. Bano, O. Nur, and M. Willander, I. Hussain, M.Y. Soomro, N. Bano, O. Nur, and M. Willander, J. Appl. Phys., 2012, 112, p 064506.
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F.J.O.-E. is grateful to the RD Research & Technology S.A. de C.V. enterprise for financial assistance. The authors also wish to thank the Department of Materials Science and Engineering of UT Dallas for constant support.
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Ochoa-Estrella, F.J., Vera-Marquina, A., Leal-Cruz, A.L. et al. In Situ Fabrication of CdS/ZnTe Heterojunction Diodes by Pulsed Laser Deposition. J. Electron. Mater. 50, 2305–2312 (2021). https://doi.org/10.1007/s11664-021-08734-w
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DOI: https://doi.org/10.1007/s11664-021-08734-w