Abstract
CuIn0.7Ga0.3Se2 (CIGS) ingots were prepared by reaction of high-purity elements in stoichiometric proportions. The direct melting of elements was carried out using an original and low-cost process. The structural and morphological properties of the obtained material were investigated through x-ray diffraction, energy dispersive spectroscopy and scanning electron microscopy. To detect and identify the defect chemistry of the obtained crystal, we used cathodoluminescence measurements at different temperatures. Moreover, the electrical properties of the CIGS material have been deeply investigated in this work using impedance spectroscopy. The activation energy for the conduction process was estimated. The conductivity data were found to obey the universal law of Jonsher. AC conduction is attributed to the correlated barrier hopping model. In the Nyquist diagram, two microscopic contributions to the electrical conduction were well identified.
Similar content being viewed by others
References
A. BenMarai, J. BenBelgacem, Z. BenAyadi, K. Djessas, and S. Alaya, J. Alloys Compd. 658, 961 (2016).
M. Nerat, Sol. Energy Mater. Sol. Cells 104, 152 (2012).
I. Bouchama, K. Djessas, A. Bouloufa, and J.L. Gauffier, Phys. Status Solidi C 10, 129 (2013).
O. Abounachit, H. Chehouani, and K. Djessas, Thin Solid Films 520, 4841 (2012).
I.H. Khudayer, Energy Proc. 119, 507 (2017).
H.H. Sheu, Y.T. Hsu, S.Y. Jian, and S.C. Liang, Vaccum. 131, 278 (2016).
T. Kato, J. Wu, Y. Hirai, H. Sugimoto, and V. Bermudez, IEEE J. Photovolt. 9, 325 (2019).
W. Fucheng, T. Fuling, X. Hongtao, L. Wenjiang, F. Yudong, and R. Zhiyuan, J. Semiconductors 35, 024011 (2014).
J.T.S. Irvine, D.C. Sinclair, and A.R. West, Adv. Mater. 2, 132 (1990).
L. Essaleh, G. Marín, S.M. Wasim, S. Lahlali, and H. Chehouani, J. Alloys Compd. 688, 210 (2016).
S. Lahlali, L. Essaleh, M. Belaqziz, H. Chehouani, A. Alimoussa, K. Djessas, B. Viallet, J.L. Gauffier, and S. Cayez, Phys. B Condens. Matter. 5026, 54 (2017).
G. Marín, L. Essaleh, S. Amhil, S.M. Wasim, R. Bouferra, A. Zoubir, M.E. El Alaoui El Moujahid, D.P. Singh, and L. Vivas, Phys. B Condens. Matter. 593, 412283 (2020).
A. Kaushal, S.M. Olhero, B. Singh, D.P. Fagg, I. Bdikin, and J.M.F. Ferreira, Ceram. Int. 40, 10593 (2014).
S. Ahn, K. Kim, Y. Chun, and K. Yoon, Thin Solid Films 515, 4036 (2007).
Y.H.A. Wang, X. Zhang, N. Bao, B. Lin, and A. Gupta, J. Am. Chem. Soc. 133, 11072 (2011).
H. Miyake and K. Sugiyama, Jpn. J. Appl. Phys. 32, 156 (1993).
G. Zahn and P. Paufler, Cryst. Res. Technol. 23, 499 (1988).
F. Abou-Elfotouh, R.J. Matson, A.M. Bakry, and L.L. Kazmerski, Thin Solid Films 193, 769 (1990).
O. Aissaoui, S. Mehdaoui, L. Bechiri, M. Benabdeslem, N. Benslim, A. Amar, A. Otmani, K. Djessas, and X. Portier, J. Lumin. 131, 109 (2011).
M.W. Bouabdelli, F. Rogti, M. Maache, and A. Rabehi, Optik 216, 164948 (2020).
Y.H. Cho, G.H. Gainer, A.J. Fisher, J.J. Song, S. Killer, U.K. Mishra, and S.P. Denbaars, Appl. Phys. Lett. 73, 1370 (1998).
J. Wu, W. Walukiewicz, K.M. Yu, J.W. Ager III, E.E. Haller, H. Lu, W.J. Schaff, Y. Saito, and Y. Yanishi, Appl. Phys. Lett. 80, 3967 (2002).
T. Shekharam, V. Laxminarasimh Rao, G. Yellaiah, T. Mohan Kumar, and M. Nagabhushanam, J. Alloys Compd. 617, 952 (2014).
S. Bhattacharya, R. Kundu, and A. Sundar Das, R. Mater. Sci. Eng. B 197, 51 (2015).
G. Yellaiah and M. Nagabhushanam, J. Cryst. Growth 421, 33 (2015).
A. El-ghandour, N.A. El-Ghamaz, M.M. El-Nahass, and H.M. Zeyada, Physica E 105, 13 (2019).
L. Essaleh, H. Chehouani, M. Belaqziz, K. Dejessas, and J.L. Gauffier, Superlatice Micrstruct. 85, 806 (2015).
L. Essaleh, G. Marin, S.M. Wasim, A. Alimoussa, and A. Bourial, Superlatice Microstruct. 92, 353 (2016).
A.K. Jonscher, Chelsea Dielectric Press, London (1983)
S.R. Elliott, Adv. Phys. 36, 135 (1987).
S. Rabaoui, H. Dahman, N. Ben Mansour, and L. El Mir, J. Mater. Sci.: Mater. Electron. 26, 1119 (2014).
L. Essaleh, S. Amhil, S.M. Wasim, G. Marín, E. Choukri, and L. Hajji, Physica E 99, 37 (2018).
S. Lahlali, L. Essaleh, M. Belaqziz, H. Chehouani, K. Djessas, and B. Viallet, Phys. B 500, 161 (2016).
S. Nasri, M. Megdiche, and M. Gargouri, Ceram. Int. 42, 943 (2016).
Author information
Authors and Affiliations
Corresponding author
Ethics declarations
Conflict of interest
The authors declare that they have no conflict of interest.
Additional information
Publisher's Note
Springer Nature remains neutral with regard to jurisdictional claims in published maps and institutional affiliations.
Rights and permissions
About this article
Cite this article
Lahlali, S., Belaqziz, M., Amhil, S. et al. Structural, Optical and Electrical Properties of CuIn0.7Ga0.3Se2 Ingot Prepared by Direct Melting. J. Electron. Mater. 49, 7518–7525 (2020). https://doi.org/10.1007/s11664-020-08463-6
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s11664-020-08463-6