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Impedance Spectroscopy and Photovoltaic Effect of Oxygen Defect Engineering on KNbO3 Ferroelectric Semiconductors

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Abstract

Perovskite-oxide (1 − x)KNbO3-xBaCo1/2Nb1/2O3−δ (KN-BCN; x = 0.00–0.20) ferroelectric semiconductor ceramics with oxygen defects are successfully prepared via a conventional solid-state sintering method. X-ray diffraction data indicate that the crystal symmetry evolves from orthogonal to tetragonal at increasing x values. Raman spectroscopic analysis confirms the long-range polarization of all compositions. X-ray photoelectron spectroscopy shows that the detailed chemical formula of 0.90KN-0.10BCN ceramics is 0.90KNbO3-0.10BaCo1/2Nb1/2O2.90. Room-temperature ferroelectricity weakens when the x value increases. The optical band gap narrows from 3.25 eV for x = 0.00 to 1.57 eV for x = 0.20, and the minimum value of ∼ 1.28 eV occurs in the 0.90KN-0.10BCN ceramic. Impedance analysis illustrates that the conduction mechanism of grains is mainly internal electron conduction, and that of the grain boundary is intrinsic conduction. The conducting mechanism of the ceramic system follows ohmic behavior by log I–log U curves. The maximum short-circuit photocurrent density and open-circuit photovoltage are 6.68 nA cm−2 and 0.80 V, and stable output is maintained. The KN-BCN ceramic system can be used in photovoltaic materials.

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Acknowledgments

This work was supported by the National Natural Science Foundation of China (Grant No. 11464006) and Guangxi Key Laboratory of Information Materials (Grant No. 191026–Z).

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Authors and Affiliations

  1. College of Material Science and Engineering, Guilin University of Electronic Technology, Guilin, 541004, People’s Republic of China

    Fei Han, Yujie Zhang, Changlai Yuan, Xiao Liu, Baohua Zhu, Fei Liu, Liufang Meng, Jiang Wang, Changrong Zhou & Guanghui Rao

  2. Guangxi Key Laboratory of Information Materials, Guilin University of Electronic Technology, Guilin, 541004, People’s Republic of China

    Changlai Yuan, Baohua Zhu, Changrong Zhou & Guanghui Rao

  3. Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, People’s Republic of China

    Guanghui Rao

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  1. Fei Han
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  2. Yujie Zhang
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Correspondence to Changlai Yuan, Baohua Zhu or Guanghui Rao.

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Han, F., Zhang, Y., Yuan, C. et al. Impedance Spectroscopy and Photovoltaic Effect of Oxygen Defect Engineering on KNbO3 Ferroelectric Semiconductors. J. Electron. Mater. 49, 6165–6174 (2020). https://doi.org/10.1007/s11664-020-08334-0

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