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Effect of Temperature and Illumination on the Current–Voltage Characteristics of a Al/p-GaSe/In Diode

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Abstract

In this study, Al/p-GaSe/In Schottky diodes (SDs) were fabricated by using a p-type GaSe semiconductor grown by the Brigdman-Stockbarger method. Current–voltage (I–V) measurements of the Al/p-GaSe/In diode were carried out from 100 K to 400 K with steps of 20 K in the +2 V- (−2) V voltage range and in the dark. The characteristic parameters of SDs were calculated from ln(I)-V characteristics according to the thermoionic emission (TE) theory and from modified Norde’s functions depending on the sample temperature. The barrier height (BH) values calculated from ln(I)-V and Norde’s functions were in agreement. The values of BH and ideality factor (IF) calculated from ln(I)-V characteristics for the SD ranged from 0.97 eV and 1.01 at 400 K to 0.45 eV and 2.18 at 100 K, respectively. The value of serial resistance (Rs) calculated from modified Norde’s functions of the SD decreased with increasing temperature. Also, the reverse bias current value of the Al/p-GaSe/In SD under light illumination was higher than the current value in the dark. Thus, the obtained results show that the prepared Al/p-GaSe/In diode might be used as a photodiode in the optoelectronic applications.

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Authors and Affiliations

  1. Department of Physics, Faculty of Sciences, Atatürk University, 25240, Erzurum, Turkey

    Hayrunnisa Budak, Fikriye Şeyma Kaya, Afsoun Ashkhasi & Bekir Gürbulak

  2. Department of Basic Sciences, Faculty of Sciences, Erzurum Technical University, 25050, Erzurum, Turkey

    Songül Duman

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  1. Hayrunnisa Budak
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  2. Songül Duman
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  3. Fikriye Şeyma Kaya
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  4. Afsoun Ashkhasi
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  5. Bekir Gürbulak
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Budak, H., Duman, S., Kaya, F.Ş. et al. Effect of Temperature and Illumination on the Current–Voltage Characteristics of a Al/p-GaSe/In Diode. J. Electron. Mater. 49, 5698–5704 (2020). https://doi.org/10.1007/s11664-020-08322-4

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