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Separate Absorption and Multiplication AlGaN Solar-Blind Avalanche Photodiodes With High-low-Doped and Heterostructured Charge Layer

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Abstract

In this work, an AlGaN solar-blind ultraviolet separate-absorption-and-multiplication avalanche photodiode is presented, where the charge layer has a high-low-doping (HLD) profile and a lower Al content. It was shown by numerical simulations that the HLD not only improved the transport efficiency of holes crossing the charge layer, but also enhanced the electric fields in the multiplication region. Moreover, a lower Al-content charge layer may induce a polarization effect to further increase the electric fields in the multiplication layers, promoting the impact ionization in the multiplication region and decreasing the avalanche breakdown voltage. The HLD and heterostructure employed in the charge layer can also improve the photoresponse by enhancing the electric field and inducing the upward valence-band bending.

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References

  1. E. Monroy, F. Calle, J.L. Pau, E. Muñoz, F. Omnès, B. Beaumont, and P. Gibart, J. Cryst. Growth 230, 537 (2001).

    Article  CAS  Google Scholar 

  2. H. Jiang and T. Egawa, Jpn. J. Appl. Phys. 47, 1541 (2008).

    Article  CAS  Google Scholar 

  3. R. McClintock, A. Yasan, K. Mayes, D. Shiell, S.R. Darvish, P. Kung, and M. Razeghi, Appl. Phys. Lett. 84, 1248 (2004).

    Article  CAS  Google Scholar 

  4. J.B. Limb, D. Yoo, J.H. Ryou, W. Lee, S.C. Shen, R.D. Dupuis, M.L. Reed, C.J. Collins, M. Wraback, D. Hanser, E. Preble, N.M. Williams, and K. Evans, Appl. Phys. Lett. 89, 011112 (2006).

    Article  Google Scholar 

  5. R. McClintock, A. Yasan, K. Minder, P. Kung, and M. Razeghi, Appl. Phys. Lett. 87, 241123 (2005).

    Article  Google Scholar 

  6. T. Tut, S. Butun, B. Butun, M. Gokkavas, H. Yu, and E. Ozbay, Appl. Phys. Lett. 87, 223502 (2005).

    Article  Google Scholar 

  7. T. Tut, M. Gokkavas, and E. Ozbay, Physica Status Solidi (c) 5, 2316 (2008).

    Article  CAS  Google Scholar 

  8. L. Sun, J. Chen, J. Li, and H. Jiang, Appl. Phys. Lett. 97, 191103 (2010).

    Article  Google Scholar 

  9. Z.G. Shao, D.J. Chen, H. Lu, R. Zhang, D.P. Cao, W.J. Luo, Y.D. Zheng, L. Li, and Z.H. Li, IEEE Electron Device Lett. 35, 372 (2014).

    Article  CAS  Google Scholar 

  10. Haifan You, Shao Zhenguang, Hu Wang Yiran, Chen Dunjun Liqun, Lu Hai, and Zheng Youdou, IEEE Photonics J. 9, 1 (2017).

    Google Scholar 

  11. P. Kung, R. McClintock, J.L. Pau, K. Minder, C. Bayram, and M. Razeghi, Proc. SPIE 6479, 64791J (2007).

    Article  Google Scholar 

  12. J.L. Pau, C. Bayram, R. McClintock, M. Razeghi, and D. Silversmith, Appl. Phys. Lett. 92, 101120 (2008).

    Article  Google Scholar 

  13. K. Nishida, K. Taguchi, and Y. Matsumoto, Appl. Phys. Lett. 35, 251 (1979).

    Article  CAS  Google Scholar 

  14. J. Bulmer, P. Suvarna, J. Leathersich, J. Marini, I. Mahaboob, N. Newman, and F.S. Shahedipour-Sandvik, IEEE Photonics Technol. Lett. 28, 39 (2016).

    Article  CAS  Google Scholar 

  15. M. Hou, Z. Qin, C. He, L. Wei, F. Xu, X. Wang, and B. Shen, Electron. Mater. Lett. 11, 1053 (2015).

    Article  CAS  Google Scholar 

  16. Z. Shao, D. Chen, Y. Liu, H. Lu, R. Zhang, Y. Zheng, L. Li, and K. Dong, IEEE J. Sel. Top. Quantum Electron. 20, 187 (2014).

    Article  Google Scholar 

  17. W.S. Zaoui, H.W. Chen, J.E. Bowers, Y. Kang, M. Morse, M.J. Paniccia, A. Pauchard, and J.C. Campbell, Opt. Express 17, 12641 (2009).

    Article  CAS  Google Scholar 

  18. Farzan Gity, John M. Hayes, Brian Corbett, and Alan P. Morrison, IEEE J. Quantum Electron. 47, 849 (2011).

    Article  CAS  Google Scholar 

  19. C.H. Yu, Z.F. Ge, X.Y. Chen, L. Li, and X.D. Luo, Opt. Quant. Electron. 50, 113 (2018).

    Article  Google Scholar 

  20. O. Ambacher, B. Foutz, J. Smart, J.R. Shealy, N.G. Weimann, K. Chu, M. Murphy, A.J. Sierakowski, W.J. Schaff, L.F. Eastman, R. Dimitrov, A. Mitchell, and M. Stutzmann, J. Appl. Phys. 87, 334 (2000).

    Article  CAS  Google Scholar 

  21. V.M. Polyakov, V. Cimalla, V. Lebedev, K. Köhler, S. Müller, P. Waltereit, and O. Ambacher, Appl. Phys. Lett. 97, 142112 (2010).

    Article  Google Scholar 

  22. K. Takeuchi, S. Adachi, and K. Ohtsuka, J. Appl. Phys. 107, 023306 (2010).

    Article  Google Scholar 

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Acknowledgments

This work is supported by the National Key Research and Development Project (Grant No. 2016YFB0400901), the State Key Program of the National Natural Science Foundation of China (Grant No. 61634002), Key Realm R&D Program of Guangdong Province, China (Grant No. 2019B010132004), and Guangdong Natural Science Foundation (Grant No. 2015A030312011).

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Authors and Affiliations

  1. School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, Guangdong, China

    Zhenhua Zhang, Lijie Sun, Meng Chen, Xinjia Qiu, Bin Li & Hao Jiang

  2. State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou, Guangdong, China

    Hao Jiang

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  1. Zhenhua Zhang
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  2. Lijie Sun
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Correspondence to Hao Jiang.

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Zhang, Z., Sun, L., Chen, M. et al. Separate Absorption and Multiplication AlGaN Solar-Blind Avalanche Photodiodes With High-low-Doped and Heterostructured Charge Layer. J. Electron. Mater. 49, 2343–2348 (2020). https://doi.org/10.1007/s11664-020-07950-0

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