Skip to main content
SpringerLink
Log in

AlGaN solar-blind ultraviolet avalanche photodiodes with a p-graded AlxGa1-xN layer and high/low Al-content AlGaN multiplication layer

  • Published:
Applied Physics A Aims and scope Submit manuscript

Abstract

We design a back-illuminated p–i–n–i–n separate absorption and multiplication (SAM) AlGaN solar-blind avalanche photodiode (APD) with a low Al-content p-graded AlxGa1-xN layer and a high/low Al-content AlGaN multiplication layer. Simultaneously, an III-nitride AlN/Al0.64Ga0.36 N distributed Bragg reflector (DBR) structure is inserted to improve the solar-blind photoresponse for the designed APD. The simulation results show that the designed APD exhibits enhanced optoelectronic characteristics compared to the conventional APD, which is attributed to the higher holes impact ionization coefficient and generated polarization electric field in the same direction as the applied bias field of the designed APD. The designed APD exhibits significant enhanced avalanche gain and reduced avalanche breakdown voltage compared with the conventional APD.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Fig. 1
Fig. 2
Fig. 3
Fig. 4
Fig. 5
Fig. 6

Similar content being viewed by others

References

  1. Y. Gu, G.F. Yang, A. Danner, D.W. Yan, N.Y. Lu, X.M. Zhang, F. Xie, Y.K. Wang, B. Hua, X.F. Ni, X. Gu, G.Q. Chen, IEEE. Tran. Electron. Dev. 67, 160 (2020)

    Article  ADS  Google Scholar 

  2. J.L. Pau, C. Bayram, R. McClintock, M. Razeghi, D. Silversmith, Appl. Phys. Lett. 92, 101120 (2008)

    Article  ADS  Google Scholar 

  3. G.F. Yang, Y. Gu, P.F. Yan, J. Wang, J.J. Xue, X.M. Zhang, N.Y. Lu, G.Q. Chen, A.C.S. Appl, Mater. Interfaces 11, 8453 (2019)

    Article  Google Scholar 

  4. E. Cicek, Z. Vashaei, R. McClintock, C. Bayram, M. Razeghi, Appl. Phys. Lett. 92, 101120 (2008)

    Article  ADS  Google Scholar 

  5. R. McClintock, J.L. Pau, C. Bayram, B. Fain, P. Giedraitis, M. Razeghi, M.P. Ulmer, Proc. SPIE 7222, 72220U (2009)

    Article  ADS  Google Scholar 

  6. J.C. Campbell, S. Demiguel, F. Ma, A. Beck, X. Guo, S. Wang, X. Zheng, X. Li, J.D. Beck, M.A. Kinch, A. Huntington, L.A. Coldren, J. Decobert, N. Tscherptner, IEEE, J. Sel. Top. Quantum. Electron. 10, 777 (2004)

    Article  Google Scholar 

  7. M. Akazawa, H. Hasegawa, Phys. Status. Solid. C. 4, 2629 (2007)

    Article  Google Scholar 

  8. S.K. Zhang, W.B. Wang, A.M. Dabiran, A. Osinsky, A.M. Wowchak, B. Hertog, C. Plaut, P.P. Chow, S. Gundry, E.O. Troudt, R.R. Alfano, Appl. Phys. Lett. 87, 262113 (2005)

    Article  ADS  Google Scholar 

  9. C.J. Yao, X.C. Ye, R. Sun, G.F. Yang, J. Wang, Y.N. Lu, P.F. Yan, J.T. Cao, Appl. Phys. A 123, 439 (2017)

    Article  ADS  Google Scholar 

  10. H.F. You, Z.G. Shao, Y.R. Wang, H.Q. Hu, D.J. Chen, H. Lu, R. Zhang, Y.D. Zheng, IEEE Photon. J. 9, 6802007 (2017)

    Google Scholar 

  11. G.F. Yang, F.X. Wang, Appl. Phys. A. 122, 735 (2016)

    Article  ADS  Google Scholar 

  12. C.H. Yu, Z.F. Ge, X.Y. Chen, L. Li, X.D. Luo, Opt. Quant. Electron. 50, 113 (2018)

    Article  Google Scholar 

  13. C.J. Yao, X.C. Ye, R. Sun, G.F. Yang, J. Wang, Y.N. Lu, P.F. Yan, J.T. Cao, S.M. Gao, Appl. Phys. Express. 10, 034302 (2017)

    Article  ADS  Google Scholar 

  14. Q. Cai, K.X. Dong, Z.L. Xie, Y. Tang, J.J. Xue, D.J. Chen, Mater. Sci. Semicon. Proc. 96, 24 (2019)

    Article  Google Scholar 

  15. Z.G. Shao, X.F. Yang, H.F. You, D.J. Chen, H. Lu, R. Zhang, Y.D. Zheng, K.X. Dong, IEEE. Tran. Dev. Lett. 38, 485 (2017)

    Article  ADS  Google Scholar 

  16. G.F. Yang, Y.Y. Tong, F. Xie, D.W. Yan, F.X. Wang, Mat. Sci. Semicon. Proc. 29, 362 (2015)

    Article  Google Scholar 

  17. Z.G. Shao, X.F. Yang, H.F. You, D.J. Chen, H. Lu, R. Zhang, Y.D. Zheng, K.X. DongIEEE, J. Sel. Top. Quant. Electron. 20, 187 (2014)

    Article  Google Scholar 

  18. G.F. Yang, F. Xie, J.J. Xue, D.W. Yan, F.X. Wang, Opt. Quant. Electron. 47, 735 (2015)

    Article  Google Scholar 

  19. J.P. Zhang, H.M. Wang, M.E. Gaevski, C.Q. Chen, Q. Fareed, J.W. Yang, G. Simin, M.A. Khan, Appl. Phys. Lett. 80, 3542 (2020)

    Article  ADS  Google Scholar 

  20. C.G. Moe, Y. Wu, J. Piprek, S. Keller, J.S. Speckl, S.P. DenBaars, E. Emerson, Phys. Stat. Sol. a. 203, 1915 (2006)

    Article  ADS  Google Scholar 

  21. R. Mcclintock, A. Yasan, K. Minder, P. Kung, M. Razeghi, Appl. Phys. Lett. 87, 241123 (2005)

    Article  ADS  Google Scholar 

  22. M.J. Hou, Z.X. Qin, C.G. He, L.S. Wei, F.J. Xu, X.Q. Wang, B. Shen, Electron. Mater. Lett. 6, 1053 (2015)

    Article  ADS  Google Scholar 

Download references

Acknowledgements

This research was funded by the Sub-Project of National Key R&D Program (2018YFB2200204, 2018YFB2200205), and the Anhui Provincial Natural Science Foundation (1808085QF199, 1808085QF204).

Author information

Authors and Affiliations

  1. Key Laboratory of Public Safety Emergency Information Technology of Anhui Province, The 38th Research Institute of China Electronics Technology Group Corporation, Hefei, 230088, China

    F. Xie, R. Yan, R. Wang, C. C. Bao & J. Wang

Authors
  1. F. Xie
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. R. Yan
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. R. Wang
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. C. C. Bao
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. J. Wang
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to F. Xie.

Additional information

Publisher's Note

Springer Nature remains neutral with regard to jurisdictional claims in published maps and institutional affiliations.

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Xie, F., Yan, R., Wang, R. et al. AlGaN solar-blind ultraviolet avalanche photodiodes with a p-graded AlxGa1-xN layer and high/low Al-content AlGaN multiplication layer. Appl. Phys. A 127, 448 (2021). https://doi.org/10.1007/s00339-021-04608-4

Download citation

  • Received:

  • Accepted:

  • Published:

  • DOI: https://doi.org/10.1007/s00339-021-04608-4

Keywords

Search

Navigation