Abstract
This paper presents the effects of precursor concentration on different properties of the V2O5 nanorods (NRs) grown by using spray pyrolysis technique. The V2O5 NRs with different precursor concentrations of VCl3 such as 0.05 M, 0.10 M, 0.15 M, and 0.20 M were prepared on the silicon (Si) substrates. The structural characteristics of NRs were investigated by using the XRD diffraction technique. The morphological and optical characteristics of V2O5 NRs were investigated by using a field emission scanning electron system and photoluminescence spectroscopy (PL), respectively. The V2O5 NRs based metal semiconductor–metal (MSM) photodetectors at different precursor concentrations were fabricated. The surface morphology results revealed the formation of dense V2O5 NRs that covered the entire substrate surface at 0.20 M precursor concentration. The PL emission spectra indicated a high intensity green emission around 525 nm (Eg = 2.36 eV) that was associated with the transitions of electrons between the bottom of the V-3d split-off level of the conduction band and the O-2p level of the valence band. The photo-response of the fabricated device was found to be maximum at 0.20 M concentration. The spectral responsivity of the device prepared with 0.20 M concentration was noted to be 0.042 A/W under 530 nm light at 3 V applied bias voltage. The response time and photosensitivity of the MSM device at 0.20 M were estimated to be 0.167 s and 8.6 × 103%, respectively. The results of this study demonstrated that V2O5 NRs with optimized precursor concentration act as a promising material for the MSM photodetector application.
Similar content being viewed by others
References
B. Yalagala, P. Sahatiya, C.S.R. Kolli, S. Khandelwal, V. Mattela, and S. Badhulika, ACS Appl. Nano Mater. 2, 937 (2019).
M.S. Pawar, P.K. Bankar, M.A. More, and D.J. Late, RSC Adv. 5, 88796 (2015).
T.A.-H. Abbas, J. Electron. Mater. 47, 7331 (2018).
M. Abyazisani, M.M. Bagheri-Mohagheghi, and M.R. Benam, Mater. Sci. Semicond. Process. 31, 693 (2015).
K. Schneider, M. Lubecka, and A. Czapla, Sens. Actuators B Chem. 236, 970 (2016).
Y. Wei, J. Zhu, and G. Wang, IEEE Trans. Appl. Supercond. 24, 1 (2014).
D.J. Ahirrao, K. Mohanapriya, and N. Jha, Mater. Res. Bull. 108, 73 (2018).
X. Yao, G. Guo, P.-Z. Li, Z.-Z. Luo, Q. Yan, and Y. Zhao, ACS Appl. Mater. Interfaces. 9, 42438 (2017).
D.M. Carrillo-Flores, M.T. Ochoa-Lara, and F. Espinosa-Magaña, Micron 52, 39 (2013).
Yu Ruixiang, C. Zhang, Q. Meng, Z. Chen, H. Liu, and Z. Guo, ACS Appl. Mater. Interfaces. 5, 12394 (2013).
H. Fu, X. Yang, X. Jiang, and A. Yu, in 2013 13th IEEE Conference on Nanotechnology (IEEE-NANO), p. 958 (2013).
W. Yan, H. Ming, D. Wang, and C. Li, Appl. Surf. Sci. 346, 216 (2015).
N.M. Abd-Alghafour, N.M. Ahmed, Z. Hassan, and M. Bououdina, Appl. Phys. A 122, 817 (2016).
O. Almora, L.G. Gerling, C. Voz, R. Alcubilla, J. Puigdollers, and G. Garcia-Belmonte, Solar Energy Mater. Solar Cell 168, 221 (2017).
Y. Vijayakumar, G.K. Mani, M.V. Ramana Reddy, and J.B. Balaguru Rayappan, Ceram. Int. 41, 2221 (2015).
D. Vernardou, E. Spanakis, G. Kenanakis, E. Koudoumas, and N. Katsarakis, Mater. Chem. Phys. 124, 319 (2010).
H.M. Zhang and W.C. Choy, IEEE Trans. Electron Devices 55, 2517 (2008).
R.-S. Chen, W.-C. Wang, C.-H. Chan, H.-P. Hsu, L.-C. Tien, and Y.-J. Chen, Nanoscale Res. Lett. 8, 443 (2013).
M. Sethu Raman, J. Chandrasekaran, R. Priya, M. Chavali, and R. Suresh, Mater. Sci. Semicond. Process. 41, 41497 (2016).
R. Mirzanezhad-Asl, A. Phirouznia, Ş. Altındal, Y. Badali, and Y. Azizian-Kalandaragh, Phys. B 561, 1 (2019).
A. Büyükbaş-Uluşan, A. Tataroğlu, Y. Azizian-Kalandaragh, and M. Koşal, J. Mater. Sci.: Mater. Electron. 30, 1 (2019).
S. Boughdachi, Y. Badali, Y. Azizian-Kalandaragh, and Ş. Altındal, J. Electron. Mater. 47, 6945 (2018).
A. Kumar, P. Singh, N. Kulkarni, and D. Kaur, Thin Solid Films 516, 912 (2008).
P. Deepak Raj, S. Gupta, and M. Sridharan, Mater. Sci. Semicond. Process. 39, 426 (2015).
S. Beke, S. Giorgio, L. Kőrösi, L. Nanai, and W. Marine, Thin Solid Films 516, 4659 (2008).
N.K. Nandakumar and E.G. Seebauer, Thin Solid Films 519, 3663 (2011).
D. Vasanth Raj, N. Ponpandian, D. Mangalaraj, and C. Viswanathan, Mater. Sci. Semicond. Process. 16, 256 (2013).
C. Ban, N.A. Chernova, and M. Stanley Whittingham, Electrochem. Commun. 11, 522 (2009).
N.M. Abd-Alghafour, N.M. Ahmed, Z. Hassan, S.M. Mohammad, M. Bououdina, and M.K.M. Ali, J. Mater. Sci.: Mater. Electron. 27, 4613 (2016).
A. Almoabadi, S. Badilescu, V.-V. Truong, M. Alsawafta, V. Stancovski, T. Sharma, and R. Brüning, in Photonics North (IEEE), p. 1 (2015)
Y. Qin, G. Fan, K. Liu, and H. Ming, Sens. Actuat. B Chem. 190, 141 (2014).
Z.S. El Mandouh and M.S. Selim, Thin Solid Films 371, 259 (2000).
R.J. Deokate, C.H. Bhosale, and K.Y. Rajpure, J. Alloy. Compd. 473, L20 (2009).
A.A. Mane, M.P. Suryawanshi, J.H. Kim, and A.V. Moholkar, Appl. Surf. Sci. 403, 540 (2017).
N. Senthil Kumar, J. Chandrasekaran, R. Mariappan, M. Sethuraman, and M. Chavali, Superlattices Microstruct. 65, 353 (2014).
M.-C. WU and C.-S. Lee, J. Solid State Chem. 182, 2285 (2009).
C. Diaz-Guerra and J. Piqueras, Cryst. Growth Des. 8, 1031 (2008).
W. Avansi, L.J.Q. Maia, C. Ribeiro, E.R. Leite, and V.R. Mastelaro, J. Nanopart. Res. 13, 4937 (2011).
J. Piprek, Semiconductor optoelectronic devices: introduction to physics and simulation (Amsterdam: Elsevier Science, 2013).
A. Venkatesan, N.R.K. Chandar, A. Kandasamy, M.K. Chinnu, K.N. Marimuthu, R.M. Kumar, and R. Jayavel, RSC Adv. 5, 21778 (2015).
W. Zhang, J. Zhao, Z. Liu, Z. Liu, and F. Zhuxi, Appl. Surf. Sci. 256, 4423 (2010).
J. Lu, H. Ming, Y. Tian, C. Guo, C. Wang, S. Guo, and Q. Liu, Opt. Express 7, 6974 (2012).
N.M. Abd-Alghafour, Vanadium pentoxide nanorods deposited by spray pyrolysis method for photodetector and pH sensor applications. Ph.D. thesis, Universiti Sains Malaysis (2018).
Acknowledgments
The authors gratefully acknowledge the financial support of the Iraqi Ministry of Higher Education and Scientific Research, University of Al-Anbar and Malaysia Ministry of Education (MOE) under LRGS (Wide Band Gap Semiconductor), Project No. 203/CINOR/6720013.
Author information
Authors and Affiliations
Corresponding authors
Additional information
Publisher's Note
Springer Nature remains neutral with regard to jurisdictional claims in published maps and institutional affiliations.
Rights and permissions
About this article
Cite this article
Abd-Alghafour, N.M., Mohammed, S.M., Ahmed, N.M. et al. Optimization of Precursor Concentration for the Fabrication of V2O5 Nanorods and their MSM Photodetector on Silicon Substrate. J. Electron. Mater. 48, 5640–5649 (2019). https://doi.org/10.1007/s11664-019-07390-5
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s11664-019-07390-5