Abstract
GaAs1−xBix has been grown by solid-source molecular beam epitaxy using varying substrate rotation rates. Changes in local bismuth saturation were studied by varying the Bi/Ga pressure ratio across the wafer. Films were grown on both GaAs and InGaAs buffer layers with varying indium content to change the strain conditions of the bismide layer and the out-of-plane growth rate. All samples demonstrated vertical composition modulations with a period of ∼ 4 nm that tracked with the rate of growth per substrate rotation cycle. The thermal stability of these composition modulations was shown to behave similarly to bulk GaAsBi. Bismide composition modulations are attributed to the low growth temperature and the varying Bi/Ga pressure ratio across the sample rather than the varying V/III ratio.
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Acknowledgments
This work is supported by the Office of Naval Research (N00014-15-1-2946) and the National Science Foundation (NSF ECCS-1337783). M. Stevens acknowledges support from the NASA Space Technology Research Fellowship (NNX15AQ79H). This work was performed in part at the Center for Nanoscale Systems (CNS), a member of the National Nanotechnology Coordinated Infrastructure Network (NNCI), which is supported by the National Science Foundation under NSF Award No. 1541959. CNS is part of Harvard University. This work also made use of the Shared Experimental Facilities at the Massachusetts Institute of Technology, supported in part by the MRSEC Program of the National Science Foundation under Award No. DMR - 1419807.
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Open Access This article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.
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Stevens, M.A., Grossklaus, K.A., McElearney, J.H. et al. Impact of Rotation Rate on Bismuth Saturation in GaAsBi Grown by Molecular Beam Epitaxy. J. Electron. Mater. 48, 3376–3382 (2019). https://doi.org/10.1007/s11664-019-06949-6
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DOI: https://doi.org/10.1007/s11664-019-06949-6