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Study the Electronic Transport Properties for InAs0.3P0.7 the First Derived Substrate from InP via Monte Carlo Methods

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Abstract

This paper compares the electronic transport proprieties of two materials, InP and InAs0.3P0.7, in order to present the advantageous characteristics of InAs0.3P0.7 and which in turn leads to inventing of a first substrate derived from InP. This comparative study is performed by using Monte Carlo methods at room temperature and includes the acoustic, polar and inter-valley scattering mechanisms, as well as the energy and drift velocity of charge carriers. The obtained results show that InAs0.3P0.7 presents better behavior in terms of charge carrier energy and drift velocity compared to InP, due to its low set energy describing the band energy of InAs0.3P0.7, as well as high atomic density. On the other hand, the registered energy saturation for charges carriers in the case of InAs0.3P0.7 is reached quickly and under lower applied electric fields compared to InP, due to its high rate of scattering, making InAs0.3P0.7 better than InP for use in high-frequency and low-power operation applications.

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Authors and Affiliations

  1. Laboratory for Materials and Renewable Energies, Faculty of Technology, Department of Electrical and Electronics Engineering, University Abou Bekr Belkaid of Tlemcen, BP: 119-13000, Tlemcen, Algeria

    Soufiane Derrouiche & Benyounes Bouazza

  2. Intelligent Structures Laboratory, Department of Electrical Engineering, Institute of Science and Technology, Ctr Univ Ain Temouchent, BP: 284-46000, Ain Temouchent, Algeria

    Choukria Sayah

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  1. Soufiane Derrouiche
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  2. Benyounes Bouazza
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  3. Choukria Sayah
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Correspondence to Soufiane Derrouiche.

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Derrouiche, S., Bouazza, B. & Sayah, C. Study the Electronic Transport Properties for InAs0.3P0.7 the First Derived Substrate from InP via Monte Carlo Methods. J. Electron. Mater. 47, 6289–6296 (2018). https://doi.org/10.1007/s11664-018-6535-8

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