Abstract
The resistive switching effect is a fascinating physical phenomenon in the development of next-generation nonvolatile memory devices. In this work, the resistive switching memory behaviors of metal/In2S3/Mo/glass devices have been investigated. We observed that the top electrode materials can affect the resistive switching memory behaviors of such devices. We have also found that the devices represent an outstanding memory behavior with the largest HRS/LRS resistance ratio (storage window) when using Au as the top electrode.
Similar content being viewed by others
References
D.S. Jeong, R. Thomas, R.S. Katiyar, J.F. Scott, H. Kohlstedt, A. Petraru, and C.S. Hwang, Rep. Prog. Phys. 75, 076502 (2012).
J.J. Yang, D.B. Strukov, and D.R. Stewart, Nat. Nanotechnol. 8, 13 (2013).
R. Waser, R. Dittmann, G. Staikov, and K. Szot, Adv. Mater. 21, 2632 (2010).
S. Kim, Y.F. Chang, M.H. Kim, S. Bang, T.H. Kim, Y.C. Chen, J.H. Lee, and B.G. Park, Phys. Chem. Chem. Phys. 19, 18988 (2017).
Y. Li, S. Long, Q. Liu, H. Lv, and M. Liu, Small 13, 1604306 (2017).
Y. Yang, P. Gao, S. Gaba, T. Chang, X. Pan, and W. Liu, Nat. Commun. 3, 732 (2012).
E. Linn, R. Rosezin, S. Tappertzhofen, U. Bottger, and R. Waser, Nanotechnology 23, 305205 (2012).
J. Borghetti, G.S. Snider, P.J. Kuekes, J.J. Yang, D.R. Stewart, and R.S. Williams, Nature 464, 873 (2010).
P.Y. Li, B. Sun, X. Zhang, G. Zhou, Y.D. Xia, L. Gan, Y. Zhang, and Y. Zhao, Mater. Lett. 202, 13 (2017).
K. Krishnan, M. Aono, and T. Tsuruoka, Nanoscale 8, 13976 (2016).
J. Kim, H. Hiroi, T.K. Todorov, O. Gunawan, M. Kuwahara, T. Gokmen, D. Nair, M. Hopstaken, B. Shin, and Y.S. Lee, Adv. Mater. 26, 7427 (2010).
N. Chaudhari, L. Mandal, O. Game, S. Warule, D. Phase, S. Jadkar, and S. Ogale, A.C.S. Appl. Mater. Interface 7, 17671 (2015).
D.H. Hwang, S. Cho, K.N. Hui, and Y.G. Son, J. Nanosci. Nanotechnol. 14, 8978 (2014).
N. Bouguila, M. Kraini, I. Najeh, I. Halidou, E. Lacaze, H. Bouchriha, H. Bouzouita, and S. Alayal, J. Electron. Mater. 44, 4213 (2015).
W.B. Zhang, C. Wang, G. Liu, X. Zhu, X. Chen, L. Pan, H. Tan, W. Xue, Z. Ji, J. Wang, Y. Chen, and R.W. Li, Chem. Commun. 50, 11856 (2014).
K.J. Yoon, S.J. Song, J.Y. Seok, J.H. Yoon, T.H. Park, D.E. Kwon, and C.S. Hwang, Nanoscale 6, 2161 (2014).
E.W. Lim and R. Ismail, Electronics 4, 586 (2015).
S.K. Vishwanath and J. Kim, J. Mater. Chem. C 4, 10967 (2016).
L.E. Yu, S. Kim, M.K. Ryu, S.Y. Choi, and Y.K. Choi, IEEE Electron Device Lett. 29, 331 (2008).
K. Qian, R.Y. Tay, M.F. Lin, J. Chen, H. Li, J. Lin, J. Wang, G. Cai, V.C. Nguyen, E.H.T. Teo, T. Chen, and P.S. Lee, ACS Nano 11, 1712 (2017).
Author information
Authors and Affiliations
Corresponding authors
Rights and permissions
About this article
Cite this article
Guo, T., Zhang, X., Sun, B. et al. Effect of Electrode Materials on Nonvolatile Resistive Switching Memory Behaviors of Metal/In2S3/Mo/Glass Devices. J. Electron. Mater. 47, 5417–5421 (2018). https://doi.org/10.1007/s11664-018-6436-x
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s11664-018-6436-x