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Comment on I. Lashkevych, O. Yu. Titov, and Yu. G. Gurevich, “Ohm’s Law for a Bipolar Semiconductor: The Role of Carrier Concentration and Energy Nonequilibria” [J. Electron. Mater., 46, 585 (2017)]

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Abstract

In a recent publication [J. Electron. Mater., 46, 585 (2017)], a number of formulae are presented for the effective conductivity of a bipolar semiconductor sandwiched between two metal contacts. However, the results are shown to be nonphysical, and the explanation is traced to errors appearing in previous literature on the subject.

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Authors and Affiliations

  1. Materials Science, Engineering, and Commercialization Program, Texas State University, 601 University Drive, San Marcos, TX, 78666, USA

    C. H. Swartz

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  1. C. H. Swartz
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Correspondence to C. H. Swartz.

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Swartz, C.H. Comment on I. Lashkevych, O. Yu. Titov, and Yu. G. Gurevich, “Ohm’s Law for a Bipolar Semiconductor: The Role of Carrier Concentration and Energy Nonequilibria” [J. Electron. Mater., 46, 585 (2017)]. J. Electron. Mater. 47, 899–900 (2018). https://doi.org/10.1007/s11664-017-5904-z

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  • DOI: https://doi.org/10.1007/s11664-017-5904-z

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