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Influence of Europium Doping on Various Electrical Properties of Low-Temperature Sintered 0.5Ba0.90Ca0.10TiO3-0.5BaTi0.88Zr0.12O3-0.1%CuO-xEu Lead-Free Ceramics

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Abstract

0.5Ba0.90Ca0.10TiO3-0.5BaTi0.88Zr0.12O3-0.1%CuO-xEu (BCT-BZT-Cu-xEu; x = 0–0.90%) lead-free ceramics were sintered at 1220°C with as-synthesized nanoparticles by a modified Pechini method. The structural characteristics and electrical properties of the ceramics that were influenced by varying europium-doping were investigated. All the ceramics featured high densification (relative density: ∼ 96%). X-ray powder diffraction results indicated the samples possessed pure orthorhombic phase. The maximum relative permittivity (ε r, 10869) was found at x around 0.30%. Europium ions could dope on different substitution sites in the ABO3 lattice, which evidently influenced electrical properties with various volumes of oxygen vacancy. Moreover, the formation mechanisms of oxygen vacancy and defect electron complexes were stated. The piezoelectric properties were impacted by defect electron complexes, internal stress, ionic electronegativity, etc. The optimal electrical properties, i.e., d 33 = 384 pC/N, Q m = 92, and k p = 0.36, were detected at x = 0.45%.

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Authors and Affiliations

  1. College of Chemistry and Chemical Engineering, Xinyang Normal University, Xinyang, 464000, People’s Republic of China

    Yongshang Tian, Shuiyun Li, Shulin Sun, Tiantian Li, Yongshang Yu & Qiangshan Jing

  2. Henan Province Key Laboratory of Utilization of Non-metallic Mineral in the South of Henan, Xinyang, 464000, People’s Republic of China

    Yongshang Tian, Tiantian Li, Yongshang Yu & Qiangshan Jing

  3. Faculty of Material Science and Chemistry, China University of Geosciences, Wuhan, 430074, People’s Republic of China

    Yansheng Gong

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  1. Yongshang Tian
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  2. Shuiyun Li
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Tian, Y., Li, S., Sun, S. et al. Influence of Europium Doping on Various Electrical Properties of Low-Temperature Sintered 0.5Ba0.90Ca0.10TiO3-0.5BaTi0.88Zr0.12O3-0.1%CuO-xEu Lead-Free Ceramics. J. Electron. Mater. 47, 684–691 (2018). https://doi.org/10.1007/s11664-017-5839-4

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