Abstract
Undoped GaSb epilayers, deposited at low growth temperature (440°C), have been grown on GaAs (001) substrate with 2° offcut towards [110], by a molecular beam epitaxy system. Interfacial misfit array (IMF) growth mode has been used in order to impede the propagation of the threading dislocations through the GaSb epilayer. Under optimized growth parameters, both transmission electron microscopy (TEM) measurements and high-resolution x-ray diffraction (HRXRD) revealed the presence of a periodic array of pure 90° edge dislocations along [110]. Furthermore, HRXRD shows a full width at half maximum of a 2-μm-thick GaSb epilayer peak as low as 195 arcsec. In addition, the GaSb layer is found to be 99.8% relaxed, with a residual strain of 1.4 × 10−4. Moreover, based on TEM measurements, the dislocations spacing or the period of the IMF was found to be 5–5.2 nm.
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This paper has been completed with the financial support of the Polish National Science Centre, Project: UMO-2015/17/B/ST5/01753.
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Benyahia, D., Kubiszyn, Ł., Michalczewski, K. et al. Interfacial Misfit Array Technique for GaSb Growth on GaAs (001) Substrate by Molecular Beam Epitaxy. J. Electron. Mater. 47, 299–304 (2018). https://doi.org/10.1007/s11664-017-5766-4
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DOI: https://doi.org/10.1007/s11664-017-5766-4