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Performance improvement of highly mismatched GaSb layers on GaAs by interfacial-treatment-assisted chemical vapor deposition

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Abstract

Strain-relieved GaSb quantum dots on GaAs can be achieved by either periodic interfacial misfit (IMF) or the conventional Stranski–Krastanov (SK) growth modes by changing the growth parameters. In this study, the Sb interfacial treatment was employed to improve the GaSb crystal quality including low defect density, smooth surface morphology, and high hole mobility. This technique yields two-dimensional (2D) islands with a height as low as 1.7 nm and width up to 190 nm in the IMF growth mode. In contrast to the interfacial treatments conventionally employed in the initial strain relaxation of GaSb/GaAs hererostructure, the Sb treatment promotes the formation of strong Ga-Sb bonds on the surface of the grown island, which effectively reduces the interfacial free energy and thus promotes the formation of 2D islands. With the Sb interfacial treatment, a high-relaxation 100-nm GaSb epilayer was grown on the GaAs substrate, the epilayers was strain relaxed and exhibited enhanced electrical properties with a high hole mobility of ~667 cm2 V−1 s−1 and with superior optical properties as evidenced by the photoluminescence B-line peak. The results of this study demonstrate an effective interfacial-treatment growth technique to relax the initial strain for the highly mismatched GaSb layers grown on a GaAs substrate.

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Acknowledgments

This work was sponsored by the TSMC, NCTU-UCB I-RiCE program, and the Ministry of Science and Technology, Taiwan, under Grant No. MOST 105-2911-I-009-301.

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Authors and Affiliations

  1. Institute of Microelectronics, Department of Electrical Engineering, Center for Micro/Nano Science and Technology, Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan, 70101, Taiwan

    Chih-Jen Hsiao, Sheng-Po Chang & Shoou-Jinn Chang

  2. Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu, 30010, Taiwan

    Minh-Thien-Huu Ha, Hong-Quan Nguyen, Hung-Wei Yu, Yuen-Yee Wong & Edward Yi Chang

  3. Institute of Photonic System and Institute of Lighting and Energy Photonics, College of Photonics, National Chiao Tung University, Tainan, 71150, Taiwan

    Chun-Kuan Liu & Jer-Shen Maa

  4. Department of Electronics Engineering, National Chiao Tung University, Hsinchu, 30010, Taiwan

    Edward Yi Chang

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  1. Chih-Jen Hsiao
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Hsiao, CJ., Ha, MTH., Liu, CK. et al. Performance improvement of highly mismatched GaSb layers on GaAs by interfacial-treatment-assisted chemical vapor deposition. J Mater Sci: Mater Electron 28, 845–855 (2017). https://doi.org/10.1007/s10854-016-5599-6

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