Abstract
To expand the potential application of monolayer WS2 systems, the structure, electronic, magnetic and optical properties of pure and Mn-X (X = B, C, N and O) co-doped monolayer WS2 systems are theoretically studied using first-principles methods based on the density function theory. The pure monolayer WS2 system is a nonmagnetic semiconductor with a direct band gap E g of 1.82 eV, and the Mn-B and Mn-N co-doped monolayer WS2 systems remain of nonmagnetic semiconducting character with smaller band gaps \( E_{\rm{g}} \) of 1.09 eV and 0.84 eV, respectively. While the Mn-C and Mn-O co-doped monolayer WS2 systems exhibit magnetic semiconducting characters with a total magnetic moment \( M_{\rm{tot}} \) of 1 \( \mu_{\rm{B}} \), and spin-up gaps \( E_{\rm{g}}^{ \uparrow } \) (spin-down gaps \( E_{\rm{g}}^{ \downarrow } \)) of 0.54 (1.17) eV and 0.61 (1.44) eV, respectively. Although the pure monolayer WS2 system has the highest transmittance in the low energy region, the Mn-B co-doped monolayer WS2 system has the highest static dielectric constants \( \varepsilon_{1} (0) \) and \( \varepsilon_{2} (0) \), reflectivity \( r(0) \), refractive indices \( n(0) \) and \( k(0) \). Meanwhile, the Mn-X (X = B, C, N and O) co-doped monolayer WS2 systems are more suitable to make infrared photodetector due to their red-shift phenomenon. In particularly, the Mn-B co-doped monolayer WS2 system becomes of great interest to researchers since the absorption edge shifts to the mid-infrared spectral region.
Similar content being viewed by others
References
K.S. Novoselov, A.K. Geim, S.V. Morozov, D. Jiang, Y. Zhang, S. Dubonos, S.V. Dubonos, I.V. Grigorieva, and A.A. Firsov, Science 306, 666 (2004).
Y. Haldorai, A. Rengaraj, C.H. Kwak, Y.S. Huh, and Y.K. Han, Synth. Met. 198, 10 (2014).
S. Khamlich, F. Barzegar, Z.Y. Nuru, J.K. Dangbegnon, A. Bello, B.D. Ngom, N. Manyala, and M. Maaza, Synth. Met. 198, 101 (2014).
M. Fathi, M. Saghafi, F. Mahboubi, and S. Mohajerzadeh, Synth. Met. 198, 345 (2014).
S.K. Georgantzinos, G.I. Giannopoulos, and N.K. Anifantis, Mater. Des. 31, 4646 (2010).
B. Akgöz and Ö. Civalek, Mater. Des. 42, 164 (2012).
D.W. Chang, H.J. Choi, A. Filer, and J.B. Baek, J. Mater. Chem. A 2, 12136 (2014).
B. Peter, D.B. Paul, R.N. Rahul, J.B. Tim, J. Da, S. Fred, A.P. Leonid, V.M. Sergey, F.G. Helen, W.H. Ernie, K.G. Andre, and S.N. Kostya, Nano Lett. 8, 1704 (2008).
M. Zhou, Y.H. Lu, Y.Q. Cai, C. Zhang, and Y.P. Feng, Nanotechnology 22, 385502 (2011).
B. Amin, T.P. Kaloni, G. Schreckenbach, and M.S. Freund, Appl. Phys. Lett. 108, 063105 (2016).
Q.H. Wang, K. Kalantar-Zadeh, A. Kis, J.N. Coleman, and M.S. Strano, Nat. Nanotechnol. 7, 699 (2012).
C. Ataca, H. Sahin, and S. Ciraci, J. Phys. Chem. C 116, 8983 (2012).
B. Radisavljevic, A. Radenovic, J. Brivio, V. Giacometti, and A. Kis, Nat. Nanotechnol. 6, 147 (2011).
D. Braga, I.G. Lezama, H. Berger, and A. Morpurgo, Nano Lett. 12, 5218 (2012).
Y. Jing, X. Tan, Z. Zhou, and P. Shen, J. Mater. Chem. A 2, 16892 (2014).
Y. Li, D. Wu, Z. Zhou, C.R. Cabrera, and Z. Chen, J. Phys. Chem. Lett. 3, 2221 (2012).
Y. Li, Z. Zhou, S. Zhang, and Z. Chen, J. Am. Chem. Soc. 130, 16739 (2008).
Y. Jing, Z. Zhou, C.R. Cabrera, and Z. Chen, J. Mater. Chem. A 2, 12104 (2014).
Q. Tang, Z. Zhou, and Z. Chen, WIREs Comput. Mol. Sci. 5, 360 (2015).
K.S. Novoselov, D. Jiang, F. Schedin, T.J. Booth, V.V. Khotkevich, S.V. Morozov, and A.K. Geim, Proc. Natl. Acad. Sci. USA 102, 10451 (2005).
W. Zhang, C.P. Chuu, J.K. Huang, C.H. Chen, M.L. Tsai, Y.H. Chang, C.T. Liang, Y.Z. Chen, Y.L. Chueh, J.H. He, M.Y. Chou, and L.J. Li, Sci. Rep. 4, 3826 (2014).
G. Eda, H. Yamaguchi, D. Voiry, T. Fujita, M. Chen, and M. Chhowalla, Nano Lett. 11, 5111 (2011).
C.J. Gil, A. Pham, A. Yu, and S. Li, J. Phys. Condens. Matter 26, 306004 (2014).
A. Ramasubramaniam and D. Naveh, Phys. Rev. B 87, 195201 (2013).
H.E. Sliney, Tribol. Int. 15, 303 (1982).
Y. Yang, X.L. Fan, and H. Zhang, Comput. Mater. Sci. 117, 354 (2016).
X. Zhao, C. Xia, T. Wang, Y. Peng, and X. Dai, J. Alloys Compd. 649, 357 (2015).
W.I. Choi, S.H. Jhi, K. Kim, and Y.H. Kim, Phys. Rev. B 81, 085441 (2010).
W.B. Xu, B.J. Huang, P. Li, F. Li, C.W. Zhang, and P.J. Wang, Nanoscale Res. Lett. 9, 554 (2014).
L.Y. Xie and J.M. Zhang, J. Alloys Compd. 702, 138 (2017).
G. Kresse and J. Hafner, Phys. Rev. B 47, 558 (1993).
G. Kresse and J. Hafner, Phys. Rev. B 49, 14251 (1994).
G. Kresse and J. Furthmüller, Comput. Mater. Sci. 6, 15 (1996).
G. Kresse and J. Furthmüller, Phys. Rev. B 54, 11169 (1996).
G. Kresse and D. Joubert, Phys. Rev. B 59, 1758 (1999).
J.P. Perdew, K. Burke, and M. Ernzerhof, Phys. Rev. Lett. 77, 3865 (1996).
Y.C. Cheng, Z.Y. Zhu, W.B. Mi, Z.B. Guo, and U. Schwingenschlögl, Phys. Rev. B 87, 100401(R) (2013).
L.Y. Xie and J.M. Zhang, Superlattices Microstruct. 98, 148 (2016).
C. Freysoldt, B. Grabowski, T. Hickel, J. Neugebauer, G. Kresse, A. Janotti, and C.G. Van de Walle, Rev. Mod. Phys. 86, 253 (2014).
M.Z. Yang, B.K. Chang, G.H. Hao, J. Guo, H.G. Wang, and M.S. Wang, Optik 125, 424 (2014).
N. Korozlu, K. Colakoglu, E. Deligoz, and Y.O. Cifci, Opt. Commun. 284, 1863 (2011).
Q.J. Liu, N.C. Zhang, F.S. Liu, H.Y. Wang, and Z.T. Liu, Opt. Mater. 35, 2629 (2013).
S. Saha and T.P. Sinha, Phys. Rev. B 62, 13 (2000).
Z.H. Yin, J.M. Zhang, and K.W. Xu, Comput. Mater. Sci. 112, 39 (2016).
G. Galzerano, M. Marano, S. Longhi, E. Sani, A. Toncelli, M. Tonelli, and P. Laporta, Opt. Lett. 21, 2085 (2003).
J. Geng, Q. Wang, T. Luo, S. Jiang, and F. Amzajerdian, Opt. Lett. 22, 3493 (2009).
D. Creeden, P.A. Ketteridge, P.A. Budni, S.D. Setzler, Y.E. Young, J.C. McCarthy, K. Zawilski, P.G. Schunemann, T.M. Pollak, E.P. Chicklis, and M. Jiang, Opt. Lett. 4, 315 (2008).
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Xie, LY., Zhang, JM. The Structure, Electronic, Magnetic and Optical Properties of the Mn-X (X = B, C, N and O) Co-Doped Monolayer WS2 . J. Electron. Mater. 46, 6544–6552 (2017). https://doi.org/10.1007/s11664-017-5699-y
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s11664-017-5699-y