Abstract
Recent advances in graphene nanoribbon-based electronic devices encourage researchers to develop modeling and simulation methods to explore device physics. On the other hand, increasing the operating speed of nanoelectronic devices has recently attracted significant attention, and the modification of acoustic phonon interactions because of their important effect on carrier mobility can be considered as a method for carrier mobility optimization which subsequently enhances the device speed. Moreover, strain has an important influence on the electronic properties of the nanoelectronic devices. In this paper, the acoustic phonons mobility of armchair graphene nanoribbons (n-AGNRs) under uniaxial strain is modeled analytically. In addition, strain, width and temperature effects on the acoustic phonon mobility of strained n-AGNRs are investigated. An increment in the strained AGNR acoustic phonon mobility by increasing the ribbon width is reported. Additionally, two different behaviors for the acoustic phonon mobility are verified by increasing the applied strain in 3m, 3m + 2 and 3m + 1 AGNRs. Finally, the temperature effect on the modeled AGNR phonon mobility is explored, and mobility reduction by raising the temperature is reported.
Similar content being viewed by others
References
C. Zhang and Q. Sun, J. Phys. Chem. Lett. 7, 2664 (2016).
Y.-W. Son, M.L. Cohen, and S.G. Louie, Phys. Rev. Lett. 97, 216803 (2006).
W.H. Liao, B.H. Zhou, H.Y. Wang, and G.H. Zhou, Eur. Phys. J. B 76, 463 (2010).
T. Fang, A. Konar, H. Xing, and D. Jena, Appl. Phys. Lett. 91, 092109 (2007).
G. Wang, Phys. Chem. Chem. Phys. 13, 11939 (2011).
D.L. Nika and A.A. Balandin, J Phys. Condens. Mater. 24, 233203 (2012).
W.X. Zhang, Z.S. Huang, W.L. Zhang, and Y.R. Li, Nano Res. 7, 1731 (2014).
C.H. Park, N. Bonini, T. Sohier, G. Samsonidze, B. Kozinsky, M. Calandra, F. Mauri, and N. Marzari, Nano Lett. 14, 1113 (2014).
M.Y. Han, B. Ozyilmaz, Y. Zhang, and P. Kim, Phys. Rev. Lett. 98, 206805 (2007).
M. Poljak, M. Wang, E.B. Song, T. Suligoj, and K.L. Wang, Solid State Electron. 84, 103 (2013).
T. Fang, A. Konar, H. Xing, and D. Jena, Phys. Rev. B 78, 205403 (2008).
A. Mogulkoc, M. Modarresi, B.S. Kandemir, M.R. Roknabadi, N. Shahtahmasebi, and M. Behdani, Phys. B 446, 85 (2014).
M. Modarresi, A. Mogulkoc, M.R. Roknabadi, and N. Shahtahmasebi, Physica E 66, 303 (2015).
I. Knezevic and N. Sule, J. Appl. Phys. 112, 053702 (2012).
A. Betti, G. Fiori, and G. Iannaccone, IEEE Trans. Electron. Dev. 58, 2824 (2011).
B.S. Dandogbessi and O. Akin-Ojo, J. Appl. Phys. 120, 055105 (2016).
N.D. Akhavan, G. Jolley, G.A. Umana-Membreno, J. Antoszewski, and L. Faraone, J. Appl. Phys. 112, 094505 (2012).
T. Sohier, Electrons and phonons in graphene: electron-phonon coupling, screening and transport in the field effect setup (Paris: Université Pierre et Marie Curie, 2015), pp. 39–56.
Y.H. Xu, J. Dai, and X.C. Zeng, J. Phys. Chem. Lett. 7, 302 (2016).
L. Tao, E. Cinquanta, D. Chiappe, C. Grazianetti, M. Fanciulli, M. Dubey, A. Molle, and D. Akinwande, Nat. Nanotechnol. 10, 227 (2015).
R. Binder, Optical Properties of Graphene (Singapore: World Scientific Publishing Company, 2016), pp. 183–220.
V.M. Borzdov, V.O. Galenchik, F.F. Komarov, D.V. Pozdnyakov, and O.G. Zhevnyak, Phys. Lett. A 319, 379 (2003).
E.H. Hwang and S. Das, Sarma. Phys. Rev. B 77, 115449 (2008).
M. Han, Y. Zhang, and H.-B. Zheng, Chin. Phys. Lett. 27, 037302 (2010).
A. Betti, G. Fiori, G. Iannaccone and Y. Mao, in IEEE International Electron Devices Meeting (IEDM) (2009), pp. 37.2.1–37.2.4.
K.I. Bolotin, K.J. Sikes, Z. Jiang, M. Klima, G. Fudenberg, J. Hone, P. Kim, and H.L. Stormer, Solid State Commun. 146, 351 (2008).
N.A.I.C. Rosid, M.T. Ahmadi, and R. Ismail, Chin. Phys. B 25, 096802 (2016).
W.A. Harrison, Electronic structure and the properties of solids: the physics of the chemical bond, 2nd ed. (New York: Dover Publications, 1989), pp. 180–202.
B. Obradovic, R. Kotlyar, F. Heinz, P. Matagne, T. Rakshit, M.D. Giles, M.A. Stettler, and D.E. Nikonov, Appl. Phys. Lett. 88, 142102 (2006).
J. Bardeen and W. Shockley, Phys. Rev. 80, 72 (1950).
K. Seeger, Semiconductor physics: an introduction (New York City: Springer, 1999), pp. 171–183.
M.T. Ahmadi, Z. Johari, N. Aziziah Amin, A.H. Fallahpour, and R. Ismail, J Nanomater. (2010). doi:10.1155/2010/753738.
M. Long, L. Tang, D. Wang, Y. Li, and Z. Shuai, ACS Nano 5, 2593 (2011).
L.H. Qu, J.M. Zhang, K.-W. Xu, and V. Ji, Physica E 56, 55 (2014).
M. T. Ahmadi and R. Ismail, in International Conference on Intelligent Systems, Modelling and Simulation (2010), pp. 401–405.
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Yousefvand, A., Ahmadi, M.T. & Meshginqalam, B. Analytical Modeling of Acoustic Phonon-Limited Mobility in Strained Graphene Nanoribbons. J. Electron. Mater. 46, 6553–6562 (2017). https://doi.org/10.1007/s11664-017-5698-z
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s11664-017-5698-z