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Fabrication of an Organic Light-Emitting Diode from New Host π Electron Rich Zinc Complex

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Abstract

A new π electron rich zinc complex was used as a fluorescent material in organic light-emitting diodes (OLEDs). Devices with a structure of indium tin oxide/poly (3,4-ethylenedi-oxythiophene):poly(styrenesulfonate) (PEDOT: PSS) (50 nm)/polyvinylcarbazole (60 nm)/Zn: %2 porphyrin derivatives (45 nm)/Al (150 nm) were fabricated. Porphyrin derivatives accounting for 2 wt.% in the π electron rich zinc complex were used as a host. The electroluminescence (EL) spectra of porphyrin derivatives indicated a red shift, as π electron rich zinc complex EL spectra. The device (4) has also a luminance of 3420 cd/m2 and maximum efficiency of 1.58 cd/A at 15 V, which are the highest values among four devices. The result of Commission International del’Eclairage (CIE) (X, Y) coordinate and EL spectrum of device (3) indicated that it is more red shifted compared to other devices. Results of this work indicate that π electron rich zinc complex is a promising host material for high efficiency red OLEDs and has a simple structure compared to Alq3-based devices.

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Authors and Affiliations

  1. Department of Physics, Faculty of Science, Arak University, Arāk, 38156-8-8349, Iran

    Mohammad Reza Jafari & Zahra Shahedi

  2. Faculty of Electrical Engineering, Urmia University of Technology, Band Road, Urmia, Iran

    Mohammad Janghouri

Authors
  1. Mohammad Reza Jafari
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  2. Mohammad Janghouri
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  3. Zahra Shahedi
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Correspondence to Mohammad Reza Jafari.

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Jafari, M.R., Janghouri, M. & Shahedi, Z. Fabrication of an Organic Light-Emitting Diode from New Host π Electron Rich Zinc Complex. J. Electron. Mater. 46, 544–551 (2017). https://doi.org/10.1007/s11664-016-4901-y

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  • DOI: https://doi.org/10.1007/s11664-016-4901-y

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