Abstract
The structural, electronic and optical properties of the GaAs1−x P x ternary alloys together with their binary GaP and GaAs compounds were investigated in the zinc-blende (ZB) phase using the density functional theory. The lattice constant of the GaAs compound decreases while its bulk modulus increases when the doping concentration of the P dopant is increased. In addition, both parameters (lattice constant and bulk modulus) show small deviations from the linear concentration dependence. The energy band gap of the GaAs compound is of the direct nature, which increases with the increase in the P dopant concentration, whereas at higher P dopant concentration, the band gap shifts from direct to indirect character. On the other hand, the hydrostatic pressure has a significant effect on the band structure of the investigated compounds where the binary GaAs compound changes from a direct band gap semiconductor to an indirect band gap semiconductor at P ≥ 5 GPa. Furthermore, the pressure-dependence of the optical properties of the GaAs, GaP and GaAs0.75P0.25 alloy were also investigated, where the calculated zero frequency refractive index and the dielectric function are also compared with the experimental results as well as with different empirical models.
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O. Madelung (ed.), Landolt-Börnstein, New Series, Group I.I.I., 17a, (Berlin: Springer, 1982).
X. Jin, S. Matsuba, Y. Honda, T. Miyajima, M. Yamamoto, T. Utiyama, and Y. Takeda, Ultramicroscopy 130, 44 (2013).
X. Jin, Y. Maeda, T. Sasaki, S. Arai, S. Fuchi, T. Ujihara, and Y. Takeda, J. Phys: Conf. Ser. 298, 1 (2011).
X. Jin, Y. Maeda, T. Saka, M. Tanioku, S. Fuchi, T. Ujihara, Y. Takeda, N. Yamamoto, Y. Nakagawa, A. Mano, S. Okumi, M. Yamamoto, T. Nakanishi, H. Horinaka, T. Kato, T. Yasue, and T. Koshikawa, J. Cryst. Growth 310, 5040 (2008).
X. Jin, S. Fuchi, and Y. Takeda, J. Cryst. Growth 370, 204–205 (2013).
M. Hayashida, R. Mirzoyan, and M. Teshima, Nucl. Instrum. Methods Phys. Res. A 567, 180 (2006).
M. Hayashida, J. Ninkovic, J. Hose, C.C. Hsu, R. Mirzoyan, and M. Teshima, Nucl. Instrum. Methods Phys. Res. A 572, 456 (2007).
T.Y. Saito, E. Bernardini, D. Bose, M.V. Fonseca, E. Lorenz, K. Mannheim, R. Mirzoyan, R. Orito, T. Schweizer, M. Shayduk, and M. Teshima, Nucl. Instrum. Methods Phys. Res. A 610, 258 (2009).
D.S. Abramkin, M.A. Putyato, S.A. Budennyy, A.K. Gutakovskii, B.R. Semyagin, V.V. Preobrazhenskii, O.F. Kolomys, V.V. Strelchuk, and T.S. Shamirzaev, J. Appl. Phys. 112, 1 (2012).
K. Watanabe, Y. Wang, H. Sodabanlu, M. Sugiyama, and Y. Nakano, J. Cryst. Growth 401, 713 (2014).
M. Othman, E. Kasap, and N. Korozlu, J. Alloys. Compd. 496, 230 (2010).
I. Vurgaftman, J.R. Meyer, and L.R. Ram-Mohan, J. Appl. Phys. 89, 5844 (2001).
A.R. Degheidy and E.B. Elkenany, Mater. Chem. Phys. 143, 2 (2013).
A. Alahmatry, N. Bouarissa, and A. Kamli, Phys. B 403, 1990 (2008).
M. Driz, N. Badi, B. Soudini, N. Amrane, H. Abid, N. Bouarissa, B. Khelifa, and H. Aourag, Comput. Mater. Sci. 2, 289 (1994).
B. Bouhafs, H. Aourag, M. Ferhat, A. Zaoui, and M. Certier, J. Appl. Phys. 82, 4923 (1997).
P. Ziesche, S. Kurth, and J.P. Perdew, Comput. Mater. Sci. 11, 122 (1998).
K. Schwarz and P. Blaha, Comput. Mater. Sci. 28, 266 (2003).
P. Blaha, K. Schwarz, P. Sorantin, and S.B. Trickey, Comput. Phys. Commun. 59, 403 (1990).
P. Blaha, K. Schwarz, G.K.H. Madsen, D. Kvasnicka, and J. Luitz, WIEN2k, An augmented plane wave plus local orbital program for calculating crystal properties (Vienna University of Technology: Vienna, 2001).
K.M. Wong, S.M. Alay-e-Abbas, A. Shaukat, Y. Fang, and Y. Lei, J. Appl. Phys. 113, 014304 (2013).
K.M. Wong, S.M. Alay-e-Abbas, Y. Fang, A. Shaukat, and Y. Lei, J. Appl. Phys. 114, 034901 (2013).
J.P. Perdew, K. Burke, and M. Ernzerhof, Phys. Rev. Lett. 77, 3865 (1996).
Z. Wu and R.E. Cohen, Phys. Rev. B. 73, 1 (2006).
F. Tran and P. Blaha, Phys. Rev. Lett. 102, 1 (2009).
D. Koller, F. Tran, and B. Plaha, Phys. Rev. B 85, 1–8 (2012).
F.D. Murnaghan, Proc. Natl. Acad. Sci. USA 30, 244 (1947).
K. Nakamura, T. Hashimoto, T. Yasui, M. Yoshimoto, and H. Matsunami, J. Appl. Phys. 40, 1377 (2001).
M. Merabet, S. Benalia, D. Rached, R. Khenata, A. Bouhemadou, S. Bin Omran, A.H. Reshak, and M. Rabah, Superlattices Microstruct. 49, 135 (2011).
S. Adachi, Properties of Semiconductor Alloys: Group-IV, III–V and II–VI Semiconductors, (Wiley: New York, 2009), p 17.
L. Vegard, Z. Phys. 5, 17 (1921).
D.S. Jiang, L.F. Bian, X.G. Liang, K. Chang, B.Q. Sun, S. Johnson, and Y.H. Zhang, J. Cryst. Growth 268, 339 (2004).
M. Linnik and A. Christou, Phys. B 318, 143 (2002).
M.P.C.M. Krijn, Semicond. Sci. Technol. 6, 29 (1991).
C. Ambrosch-Draxl and J.O. Sofo, Comput. Phys. Commun. 175, 1 (2006).
N.M. Ravindra, S. Auluck, and V.K. Srivastava, Phys. Status Solidi B 93, K155 (1979).
P.J.L. Herve and L.K.J. Vandamme, Infrared Phys. Technol. 35, 611 (1994).
R.R. Reddy and Y. Nazeer, Ahammed, K. Rama Gopal, D.V. Raghuram. Opt. Mater. 10, 98 (1998).
S.S. Li, Semiconductor Physical Electronics (New York: Springer Science, 2006), p. 253.
M. Jaros, Phys. Rev. B 37, 7112 (1988).
S. Adachi, Properties of Group- IV, III -V and II-VI Semiconductors (New York: Wiley, 2005) (Chapter 2).
A.R. Degheidy, A.S. Elabsy, and E.B. Elkenany, Superlattices Microstruct. 52, 340 (2012).
J. Łagowski, A. Iller, and A. Šwiatek, Surf. Sci. 49, 8 (1975).
H. Abid, N. Badi, B. Soudini, N. Amrane, M. Driz, M. Hammadi, H. Aourag, and B. Khelifa, Mater. Chem. Phys. 38, 165 (1994).
D.E. Aspnes and A.A. Studna, Phys. Rev. B 27, 997 (1983).
Y. Al-Douri and A.H. Reshak, Appl. Phys. A 104, 1164 (2011).
J.C. Phillips, Bonds and Bands in Semiconductors, (New York: Academic, 1973).
Acknowledgements
The authors (Khenata and Bin-Omran) acknowledge the financial support provided by the Deanship of Scientific Research at King Saud University for funding this work through research group project No: RPG-VPP-088.
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Moussa, R., Abdiche, A., Abbar, B. et al. Ab Initio Investigation of the Structural, Electronic and Optical Properties of Cubic GaAs1−x P x Ternary Alloys Under Hydrostatic Pressure. J. Electron. Mater. 44, 4684–4699 (2015). https://doi.org/10.1007/s11664-015-4048-2
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DOI: https://doi.org/10.1007/s11664-015-4048-2