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Bipolar Switching Behavior of ZnO x Thin Films Deposited by Metalorganic Chemical Vapor Deposition at Various Growth Temperatures

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Abstract

The bipolar resistive switching behaviors of ZnO films grown at various temperatures by metalorganic chemical vapor deposition have been investigated. The ZnO films were grown on Pt/Ti/SiO2/Si(100) substrate, and the ZnO growth temperature was varied from 300°C to 500°C in steps of 100°C. Rutherford backscattering spectroscopy analysis results showed that the chemical compositions of the ZnO films were oxygen-poor Zn1O0.9 at 300°C, stoichiometric Zn1O1 at 400°C, and oxygen-rich Zn1O1.3 at 500°C. Resistive switching properties were observed in the ZnO films grown at 300°C and 400°C. In contrast, high current, without switching properties, was found in the ZnO film grown at 500°C. The ZnO film grown at 500°C had higher concentration of both nonlattice oxygen (4.95%) and oxygen vacancy (3.23%) than those grown at 300°C or 400°C. The resistive switching behaviors of ZnO films are related to the ZnO growth temperature via the relative amount of oxygen vacancies in the film. Pt/ZnO/Pt devices showed asymmetric resistive switching with narrow dispersion of switching voltage.

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Authors and Affiliations

  1. Department of Materials Science and Engineering, Korea University, Anam-dong, Seongbuk-gu, Seoul, 136-713, Republic of Korea

    Seonho Bae, Dae-Sik Kim, Seojoo Jung, Woo Seop Jeong, Jee Eun Lee, Seunghee Cho, Junsung Park & Dongjin Byun

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  1. Seonho Bae
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  2. Dae-Sik Kim
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  7. Junsung Park
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Bae, S., Kim, DS., Jung, S. et al. Bipolar Switching Behavior of ZnO x Thin Films Deposited by Metalorganic Chemical Vapor Deposition at Various Growth Temperatures. J. Electron. Mater. 44, 4175–4181 (2015). https://doi.org/10.1007/s11664-015-3935-x

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  • DOI: https://doi.org/10.1007/s11664-015-3935-x

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