Abstract
The future development of low-temperature and low-pressure bonding technology is necessary for fine-pitch bump application. We propose a bump structure using Ag nanoparticles as an intermediate layer coated on a fine-pitch Cu pillar bump. The intermediate layer is prepared using an efficient and cost-saving squeegee-coating method followed by a 100°C baking process. This bump structure can be easily flattened before the bonding process, and the low-temperature sinterability of the nanoparticles is retained. The bonding experiment was successfully performed at 250°C and 39.8 MPa and the bonding strength was comparable to that achieved via other bonding technology utilizing metal particles or porous material as bump materials.
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Acknowledgements
This work has been partly supported by the Japan Ministry of Education, Culture, Sports, Science and Technology (MEXT), a Grant-in-Aid for Scientific Basic Research (S) No. 23226010, the Specially Promoted Research “Establishment of Electrochemical Device Engineering”, and a Grant-in-Aid for Cooperative Research Project Nationwide Joint-Use Research Institute on Advanced Materials Development and Integration of Novel Structured Metallic and Inorganic Materials from MEXT. This work is also partly supported by JSPS KAKENHI Grant Number 25289241. The authors also wish to acknowledge the support provided by the MEXT Nanotechnology Platform Support Project of Waseda University.
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Fu, W., Nimura, M., Kasahara, T. et al. A Metal Bump Bonding Method Using Ag Nanoparticles as Intermediate Layer. J. Electron. Mater. 44, 4646–4652 (2015). https://doi.org/10.1007/s11664-015-3932-0
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DOI: https://doi.org/10.1007/s11664-015-3932-0