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Structural and Optical Properties of GaS Single Crystals Irradiated by Hydrogen

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Abstract

Using Raman light scattering and Rutherford backscattering, we studied the structural disorder of layered GaS crystals before and after hydrogen (H +2 ) implantation with energy of 140 keV. Initially, the elemental components of GaS were distributed uniformly in depth, and this distribution remained stable up to a dose of 5 × 1015 at./cm2. Doses up to 1 × 1015 at./cm2 increased the photoresponse (from 0.66 to 5.3 times) over a wide wavelength range from 490 nm to 900 nm. Additionally, the irradiated samples displayed new photoresponse peaks with maximums at λ = 668 nm and λ = 739 nm, corresponding to new energy levels of 0.59 eV and 0.77 eV, respectively. However, further dose increase up to 5 × 1015 at./cm2 dramatically reduced the photoresponse due to structural disorder (amorphization). The experimental value of the critical dose for initial amorphization was greater than 1 × 1015 at./cm2, which agrees with the calculated value. Raman scattering confirmed the photoresponse results.

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Authors and Affiliations

  1. Institute of Radiation Problems, Azerbaijan National Academy of Sciences, 9B Vahabzade Str., Baku, Azerbaijan

    Adil Garibov, Rahim Madatov, Yusif Mustafayev, Farid Ahmadov, Gadir Ahmadov & Murad Jahangirov

  2. Azerbaijan National Academy of Aviation, Bina Sett., 25th km, Baku, Azerbaijan

    Rahim Madatov

  3. National Nuclear Research Centre of Ministry of Communications and High Technologies, 77, Zarifa Aliyeva Str., Baku, Azerbaijan

    Adil Garibov, Rahim Madatov, Farid Ahmadov & Gadir Ahmadov

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  1. Adil Garibov
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  2. Rahim Madatov
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  3. Yusif Mustafayev
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  4. Farid Ahmadov
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  5. Gadir Ahmadov
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  6. Murad Jahangirov
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Correspondence to Farid Ahmadov.

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Garibov, A., Madatov, R., Mustafayev, Y. et al. Structural and Optical Properties of GaS Single Crystals Irradiated by Hydrogen. J. Electron. Mater. 44, 3375–3379 (2015). https://doi.org/10.1007/s11664-015-3904-4

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  • DOI: https://doi.org/10.1007/s11664-015-3904-4

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