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Advantages of Blue InGaN Light-Emitting Diodes with a Mix of AlGaN and InGaN Quantum Barriers

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Abstract

In this study, a new design of quantum barriers has been investigated numerically with the purpose of improving the optical performance of blue InGaN light-emitting diodes (LEDs). Through analysis of energy band diagrams, carrier concentrations, carrier current densities, Auger recombination rates, and radiative recombination rates, we obtain simulation results showing that the proposed structure with a mix of AlGaN and InGaN quantum barriers can significantly improve the light output power and internal quantum efficiency (IQE), being mainly attributed to successful enhancement of the hole injection efficiency and suppression of the electron leakage current. Moreover, the efficiency droop of the LEDs is markedly improved by using the newly designed structure.

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Acknowledgements

Project supported by the National Natural Science Foundation of China (Grant No. 61176043) and the Special Funds for Provincial Strategic and Emerging Industries Projects of Guangdong, China (Grant Nos. 2012A080304016).

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Authors and Affiliations

  1. Laboratory of Nanophotonic Functional Materials and Devices, Institute of Optoelectronic Materials and Technology, South China Normal University, Guangzhou, 510631, China

    Si-Ming Zeng, Guang-Han Fan & Shu-Wen Zheng

  2. Experimental Teaching Center, Guangdong University of Technology, Guangzhou, 510006, China

    Si-Ming Zeng

Authors
  1. Si-Ming Zeng
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  2. Guang-Han Fan
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  3. Shu-Wen Zheng
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Correspondence to Guang-Han Fan.

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Zeng, SM., Fan, GH. & Zheng, SW. Advantages of Blue InGaN Light-Emitting Diodes with a Mix of AlGaN and InGaN Quantum Barriers. J. Electron. Mater. 44, 3253–3258 (2015). https://doi.org/10.1007/s11664-015-3886-2

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  • DOI: https://doi.org/10.1007/s11664-015-3886-2

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